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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Gettering of Impurities in Hydrogen Implanted...

Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon

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Gettering and Defect Engineering in Semiconductor Technology X

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

565-570

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.565

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Online since:

September 2003

Authors:

I.V. Antonova, Andrzej Misiuk, Adam Barcz, Di Sheng Yang, V.P. Popov

Keywords:

Damage, Gettering, Implantation, Impurity, Nitrogen, Silicon

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.1016/s0022-0248(01)01277-5