Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

565-570

DOI:

10.4028/www.scientific.net/SSP.95-96.565

Citation:

I.V. Antonova et al., "Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon", Solid State Phenomena, Vols. 95-96, pp. 565-570, 2004

Online since:

September 2003

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$35.00

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