Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

587-592

DOI:

10.4028/www.scientific.net/SSP.95-96.587

Citation:

R. Kögler et al., "Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering", Solid State Phenomena, Vols. 95-96, pp. 587-592, 2004

Online since:

September 2003

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.