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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Ion Beam Induced Excess Vacancies in Si and SiGe...

Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering

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Gettering and Defect Engineering in Semiconductor Technology X

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Solid State Phenomena (Volumes 95-96)

Pages:

587-592

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.587

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Online since:

September 2003

Authors:

Reinhard Kögler, A. Peeva, An. Kuznetsov, J.S. Christensen, Bengt Gunnar Svensson, Wolfgang Skorupa

Keywords:

Cavities, Copper (Cu), Excess Vacancies, Ion Implantation, R_p/2-Gettering, Silicon, Silicon-Germanium (SiGe)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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