Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon

Yue Long Huang; Michael Seibt; Wolfgang Schröter

doi:10.4028/www.scientific.net/SSP.95-96.617

Paper Titles

Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering
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Internal Gettering Efficiency in p/p⁺ and p/p^- Silicon Epistructures
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Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level
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Atomically Controlled Technology for Future Si-Based Devices
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Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon
p.617

Application-Specific Wafer Reclaim
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Coulomb Blockade in Silicon Nanocrystals Embedded in SiO₂ Matrix
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Self-Assembled Surface Patterning and Structural Modification upon Femtosecond Laser Processing of Crystalline Silicon
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Local Dielectric Degradation of Cu-Contaminated SiO₂ Thin Films
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Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

617-622

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.617

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Online since:

September 2003

Authors:

Yue Long Huang, Michael Seibt, Wolfgang Schröter

Keywords:

Disordered Phase, Gold, Molecular Beam Epitaxy, Reflection High Energy Electron Diffraction, Silicon, TEM

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References

[1] D.J. Eaglesham: J. Appl. Phys. Vol. 77 (1995), p.3597.

Google Scholar

[2] Y. -L. Huang, M. Seibt and W. Schröter: submitted to Phys. Rev. B.

Google Scholar

[3] W.C.A.N. Ceelen, B. Moest, M. de Ridder, L.J. van IJzendoorn, A.W. Denier v. d. Gon, and H.H. Brongersma: Appl. Surf. Sci. Vol. 134 (1998), p.87.

DOI: 10.1016/s0169-4332(98)00226-8

Google Scholar

[4] A.K. Green and E. Bauer: J. Appl. Phys. Vol. 47 (1976), p.1284.

Google Scholar

[5] M. Hanbücken, Z. Imam, J.J. Metois, and G. Le Lay: Surf. Sci. Vol. 162 (1985), p.628.

Google Scholar

[6] T. Narusawa, K. Kinoshita, W.M. Gibson and A. Hiraki: J. Vac. Technol. Vol. 18 (1981), p.872.

Google Scholar

[7] K. Oura and T. Hanawa: Surf. Sci. Vol. 82 (1979), p.202.

Google Scholar

[8] H.S. Chen and D. Turnbull: J. Appl. Phys. Vol. 38 (1967), p.646.

Google Scholar

[9] H. Okamoto and T.B. Massalski: Bulletin of Alloy Phase Diagrams Vol. 4(2) (1983), p.190.

Google Scholar

[10] A. Hiraki: Surf. Sci. Vol. 168 (1986), p.74.

Google Scholar

[11] Ph. Mangin, G. Marchal, C. Mourey and Chr. Janot: Phys. Rev. B Vol. 21 (1980), p.3047.

Google Scholar

[12] K.H. Westmacott, S. Hinderberger and U. Dahmen: Phil. Mag. A Vol. 81 (2001), p.1547.

Google Scholar

[13] Ph. Buffat and J-P. Borel: Phys. Rev. A Vol. 13 (1976), p.2287.

Google Scholar

[14] T. Tanaka and Shigeta Hara: Z. Metallkd. Vol. 92 (2001), p.476.

Google Scholar