Self-Assembled Surface Patterning and Structural Modification upon Femtosecond Laser Processing of Crystalline Silicon

Florenta Costache; Simona Kouteva-Arguirova; Jürgen Reif

doi:10.4028/www.scientific.net/SSP.95-96.635

Paper Titles

Atomically Controlled Technology for Future Si-Based Devices
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Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon
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Application-Specific Wafer Reclaim
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Coulomb Blockade in Silicon Nanocrystals Embedded in SiO₂ Matrix
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Self-Assembled Surface Patterning and Structural Modification upon Femtosecond Laser Processing of Crystalline Silicon
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Local Dielectric Degradation of Cu-Contaminated SiO₂ Thin Films
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Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System
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Hafnium Oxide on Silicon: A Non-Destructive Characterization of the Interfacial Layer
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Surface Tension Variation of Silicon Melts with Nitrogen Addition
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Self-Assembled Surface Patterning and Structural Modification upon Femtosecond Laser Processing of Crystalline Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

635-640

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.635

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Online since:

September 2003

Authors:

Florenta Costache, Simona Kouteva-Arguirova, Jürgen Reif

Keywords:

Crystalline Phase, Femtosecond Laser Processing, Raman Spectroscopy, Self-Assembly of Nanostructures, Silicon, Time-of-Flight Mass Spectroscopy

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