Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

647-652

DOI:

10.4028/www.scientific.net/SSP.95-96.647

Citation:

V.D. Akhmetov et al., "Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System", Solid State Phenomena, Vols. 95-96, pp. 647-652, 2004

Online since:

September 2003

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