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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Process-Induced Changes of the Properties of...

Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

647-652

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.647

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Online since:

September 2003

Authors:

V.D. Akhmetov, Martin Kittler, Winfried Seifert, S. Marschmeyer, Hans Richter, Peter Formanek, J. Doerschel

Keywords:

C-V, Energy Dispersive X-Ray (EDX), FT-IR, Low-k Dielectrics, Reactive Ion Etching

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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