Hafnium Oxide on Silicon: A Non-Destructive Characterization of the Interfacial Layer

Abstract:

• Periodical: Solid State Phenomena (Volumes 95-96)
• Pages: 653-658
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.95-96.653
• Online since: September 2003
• Authors: Dirk Wolfframm, Simona Kouteva-Arguirova, Tzanimir Arguirov, R.P. Schmid, K. Dittmar, I Zienert, Jürgen Reif
• Keywords: Annealing, HfSiON, High-k Dielectrics, Interface Characteristics, MOCVD, Nitrogen

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DOI: 10.1063/1.1497450