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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Surface Tension Variation of Silicon Melts with...

Surface Tension Variation of Silicon Melts with Nitrogen Addition

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

659-664

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.659

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Online since:

September 2003

Authors:

Kazutaka Terashima, Mitsuyoshi Sakairi, Muneyuki Hirai, Tomohisa Tsuchiya

Keywords:

Nitrogen Additions, Property Variation, Silicon Melt, Surface Tension

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1998] 490. 6) K.Nakamura, T.Saisyoji, T.Kubota, T.Iiada, J.Tomioka and M.Nishimura, Proceedings of the 2nd International Symposium on Advanced Science and Technology of Silicon Materials (1996) 282. 7) H.Nakanishi, K.Nakazato and K.Terashima, Jpn. J. Appl. Phys. Vol.39

[2000] 6487. 8) W.D. Harkins and H.F. Jardan, J. Am. Chem. Soc. 52 (1930) 1751. Ar Inlet Exhaust Carbon fiber insulator Upper graphite heater Lower graphite heater Molten Silcon Water cooled chamber Electronic balance Tungsten wire Alumina tube Thermocouple SiC coated graphite crucible SiC coated graphite ring Heater controlled thermocouples Fig.1 Schematic view of surface tension measurement apparatus 1690 1700 1710 1720 1730 1740 1750 1760 1770 Temperature (K) 770 775 780 785 790 Surface Tension (x10-3N/m) Fig.2 Surface tension variation with adding impurity. Surface tensions with nitrogen doping are depicted by closed circles and closed squares. 3000 3500 4000 4500 5000 5500 6000 6500 7000 Time (sec) 10-8 10-7 10-6 10-5 Ion current (A) Argon gas Nitrogen molecule Fig.3. QMS signals of nitrogen gas and argon gas. non doped d � /dT= � 0.213 ( mN/m㨯K ) N2� 1.07�1016 atoms/cm3 d � /dT= � 0.218 ( mN/m㨯K ) N 1.05 10 atoms/cm