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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Application-Specific Wafer Reclaim

Application-Specific Wafer Reclaim

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Gettering and Defect Engineering in Semiconductor Technology X

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

623-628

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.623

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Online since:

September 2003

Authors:

Hans-Martin Dudenhausen, Mike Fritzsche, Christiane Streit, Christian Reuss

Keywords:

Cost Reduction, Silicon Wafer, Wafer Reclaim

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Morinaga, M. Suyana, M. Nose, S. Verhaverbeke, T. Ohmi, A model for the electrochemical deposition and removal of metallic impurities on Si surfaces, IEICE Trans. Electron., Vol. E79-C, No. 3, March (1996).

[2] A. Istratov, E. Weber, Physics of copper in Silicon, Journal of the Electrochemical Society, 149 (1) G21-G30 (2002).

[3] T. Cacouris, Novellus Systems, Preventing cross-contamination caused by copper diffusion and other sources, http: /www. micromagazine. com/archive/99/07/cacouris. html.