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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Internal Gettering Efficiency in p/p+ and p/p-...

Internal Gettering Efficiency in p/p⁺ and p/p^- Silicon Epistructures

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Abstract:

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Gettering and Defect Engineering in Semiconductor Technology X

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

593-598

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.593

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Online since:

September 2003

Authors:

Cesare Frigeri, G. Borionetti, P. Godio, E. Gombia

Keywords:

CZ Si, EBIC, Gettering, Iron, Oxygen Precipitates, p⁺ Doping

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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