Solid State Phenomena

ISSN: 1662-9779

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Volumes
Edited by: Stepas Janušonis
Online since: April 2004
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume comprises the proceedings of the 6th international conference on Self-Formation Theory and Applications.

97-98

Edited by: H. Richter and M. Kittler
Online since: September 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.

95-96

Edited by: Witold Lojkowski and John R. Blizzard
Online since: June 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The aim of this book is to review recent progress in the understanding of the new properties, or unusual combinations of properties, possessed by nanostructured materials; with particular emphasis being placed on interfacial effects.

94

Edited by: T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner
Online since: June 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book comprises the over 100 contributions that were presented at the International Conference on Polycrystalline Semiconductors which took place from September 10 to 13, 2002, in Nara, Japan.

93

Edited by: Marc Heyns, Paul Mertens and Marc Meuris
Online since: May 2003
Description: The issues addressed by the Sixth International Symposium on the Ultra Clean Processing of Silicon Surfaces included all aspects of ultra-clean Si-technology, cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This covered studies of Si-surface chemistry and topography and its relationship to device performance and process yield, cleaning in relationship to new gate stacks, cleaning at the interconnect level, resist stripping and polymer removal, cleaning and contamination control of various new materials, wafer backside cleaning and cleaning following Chemical-Mechanical-Polishing (CMP).

92

Edited by: P. Sajgalík, M. Drábik and S. Varga
Online since: April 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book features 100 refereed papers, grouped under the following six headings: Advanced Synthesis & Characterization Techniques of Materials, Structure & Electron Structure of Solids, Chemistry of Glasses, Novel Inorganic Materials, Layered Compounds, Clathrates & Intercalates, Deposited Films & Surface Chemistry.

90-91

Edited by: L.B. Magalas
Online since: February 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book comprises the proceedings of the Second International School on Mechanical Spectroscopy; presented here as invited lectures (Part I) and contributed papers (Part II). After having originated merely as a technique for the study of internal friction, mechanical spectroscopy has developed strongly, during the past decade, into a tool which is now indispensable for making advances in the creation of new materials. This book will therefore provide an excellent reference source for every researcher working in the field.

89

Edited by: G. Neumann and C. Tuijn
Online since: November 2002
Description: The systematic investigation of self-diffusion and impurity diffusion in metals began as a result of the availability of a wide variety of artificial radio- isotopes following the Second World War. During the following years, rapid advances in the theory of solid-state diffusion and the ever-increasing number of experimental data were comprehensively described in any number of textbooks and review papers. But impurity diffusion in metals was more or less superficially treated in the textbooks, and some of the review papers, with the result that - even up to now - a comprehensive review of the correct interpretation of impurity diffusion in metals has been lacking.

88

Edited by: P. Klimanek, A.E. Romanov, B.M. Seefeldt
Online since: February 2002
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The last few years have witnessed a rapidly growing interest in the explanation and interpretation of the mesoscale microstructures which occur in distorted crystalline objects such as, for instance, conventional plastically deformed metals and alloys, as well as high-performance materials including ultra-fine grained polycrystals, nanocrystals and thin films.

87

Edited by: S. Pizzini
Online since: December 2001
Description: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

85-86

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