Solid State Phenomena

ISSN: 1662-9779

Main Themes

Volumes
Edited by: H. Richter, M. Kittler and C. Claeys
Online since: July 1995
Description: At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.

47-48

Edited by: Hans Neber-Aeschbacher
Online since: July 1995
Description: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.

44-46

Edited by: G. Ananthakrishna, L.P. Kubin and G. Martin
Online since: April 1995
Description: Instabilities and patterning in driven materials are two related topics in materials science to which increasing attention has been paid in the past few years, leading to the emergence of a fastly expanding and pluridisciplinary domain. Theoretical approaches as well as simulations have yielded bases for modelling the kinetics and the dynamics of mutually interacting populations of objects, as well as various transitions towards organized configurations far from equilibrium.

42-43

Edited by: Jerzy Jedlinski
Online since: February 1995
Description: This volume focuses on how understanding of diffusion and reaction mechanisms affects the development of materials with the improved service properties.

41

Edited by: Wladyslaw Bogusz, Waclaw Jakubowski and Franciszek Krok
Online since: December 1994
Description: The fourth of the series International Symposium on Systems with Fast Ionic Transport was held in Warsaw, Poland. The Symposium devoted for presentation of the recent results and discussion of problems in the area of solid state ionics, among the scientists from East and from West was attended by 72 participants from 15 countries.

39-40

Edited by: H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud
Online since: March 1994
Description: This book covers the physics and technology of polycrystalline semiconductors by presenting the work of scientists who are concerned with a variety of polycrystalline materials in research, technology, and application, with a view to bridge the gap between fundamental and technological aspects of polycrystalline semiconductors.

37-38

Edited by: J. Rabier, A. George, Y. Bréchet and L. Kubin
Online since: September 1993
Description: This publication bears witness of a renewal of the studies on dislocations. The texts of the lectures as well as those of the contributions illustrate, indeed, the wide spectrum of the present concerns. The openings towards physics, mechanics, even electrochemistry or geology, the new experimental approaches will certainly benefit to the investigation of new materials and complex situations.

35-36

Edited by: Kenkichi Okada
Online since: September 1993
Description: Catastrophe theory, which treats the singularities of smooth real-valued functions, refers to the unexpectedness of discontinous effects produced by continuos causes. Examples of this behaviour can be found throughout contemporary science. This theory can unify concepts and nomenclatures which have been in disarray for a long time because of their independent development in different scientific fields. Also, Catastrophe Theory emphazises metastable states, whereas "rigorous" statistical mechanics does not, and even denies their existence.

34

Edited by: H.G. Grimmeiss, M. Kittler and H. Richter
Online since: December 1993

32-33

Edited by: A. Dunlop, F. Rullier-Albenque, C. Jaouen, C. Templier and J. Davenas
Online since: January 1992
Description: The purpose of this book is to provide a state-of-the-art picture of the field of radiation damage. It covers various topics extending from theoretical understanding of energy deposition and defect creation to industrial and nuclear applications.

30-31

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