Solid State Phenomena

ISSN: 1662-9779

Main Themes

Volumes
Edited by: M. Danielewski
Online since: January 2000
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book covers the principal topics of basic and applied research on diffusion-controlled transport phenomena in metals, ceramics and other systems. Particular attention is paid to diffusional mass transport, reactive diffusion, interdiffusion and phase transformations. Further attention is paid to the practical aspects of applying a deeper understanding of diffusion and reaction mechanisms to the development of materials with improved service properties.

The theory of interdiffusion, reactive diffusion and defect phenomena, the predictions of computer models, and other theoretical studies are extensively covered. Altogether, this again makes the present work an up-to-date and convenient source of information on current trends in the field of solid-state diffusion.

72

Edited by: R.P. Agarwala
Online since: October 1999
Description: With the continuing evolution of fabrication techniques and new structures for semiconducting materials, the list of new defect phenomena has also increased apace. The present book discusses point defects, defect-assisted diffusion, metal impurity additions, metastable defects, magnetic hyperfine interaction of deep donors in compound semiconductors, and oxygen and hydrogen impurity defects.

71

Edited by: H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Online since: August 1999
Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

69-70

Edited by: J.H. Werner, H.P. Strunk, H.W. Schock
Online since: April 1999
Description: Like the previous conferences in this series, POLYSE '98 covered many aspects of polycrystalline semiconductors. Whereas earlier proceedings had included many contributions on basic research, for example on the structural properties of single grain boundaries, later proceedings had included more articles on solar cells and thin-film transistors, seemingly marking a transition to a more technology-oriented conference. However, the contributions to POLYSE '98 show that the POLYSE-series is again bringing together researchers from basic research as well as engineers working on devices.

The 84 papers cover topics such as: beam-induced currents, thin-film silicon, silicon crystallization, oxide semiconductor films, chalcogenide and spinel films, chalcopyrite films, thin-film junctions and devices; thus providing an extensive survey of the most recent results in polycrystalline semiconductor research.

67-68

Edited by: Marc Heyns, Marc Meuris and Paul Mertens
Online since: November 1998
Description: The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).

65-66

Edited by: M. Kittler, O. Breitenstein, A. Endrös, W. Schröter
Online since: December 1998
Description: The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.

63-64

Edited by: Milorad Davidovic and Zoran Ikonic
Online since: June 1998
Description: Condensed matter physics is an important field, not only for physicists, but also for other scientists and engineers. It encompasses all types of solid and liquid materials. Solid-state phenomena in metals, semiconductors, dielectrics, magnetic and optical materials in all their forms (crystalline, amorphous, nanocrystalline, polymer, liquid) are being intensely investigated. This is being done both for fundamental reasons, and because of the numerous actual and possible practical applications. Therefore, condensed matter physics is also the keystone of electrical, electronic and mechanical engineering, technology, and the development of its methods thus has a direct influence upon applied sciences.

61-62

Edited by: Nicole Clément and Joël Douin
Online since: January 1998
Description: Dislocations were introduced into crystal physics, and particularly into the theory of plasticity, in 1934. For many years, they were the field of speculation of a small group of specialists, not considered seriously by real physicists and metallurgists. After W.T. Read Jr's fundamental work in 1953 and further developments by Cottrel, Friedel, Frank and Hirsch, dislocations had become part of the working vocabulary of solid-state physics and metallurgy.

59-60

Edited by: C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Online since: July 1997
Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

57-58

Edited by: J. Lendvai
Online since: August 1997
Description: Many important properties of materials are governed by the microstructures which have evolved during their prior treatment. Therefore, the characterisation of structures and the understanding of structural changes has always been a central problem in any discipline which deals with materials.

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Showing 171 to 180 of 212 Main Themes