Solid State Phenomena

ISSN: 1662-9779

Main Themes

Edited by: P. Klimanek, A.E. Romanov, B.M. Seefeldt
Online since: February 2002
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The last few years have witnessed a rapidly growing interest in the explanation and interpretation of the mesoscale microstructures which occur in distorted crystalline objects such as, for instance, conventional plastically deformed metals and alloys, as well as high-performance materials including ultra-fine grained polycrystals, nanocrystals and thin films.


Edited by: S. Pizzini
Online since: December 2001
Description: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.


Edited by: V. Raineri, F. Priolo, M. Kittler and H. Richter
Online since: November 2001
Description: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.


Edited by: O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner
Online since: November 2001
Description: This book comprises the contributions to the sixth conference on polycrystalline semiconductors (POLYSE).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The conference covered many aspects of polycrystalline semiconductors, but was more applications-oriented than on previous occasions; thereby reflecting the rapid evolution of these technologies. POLYSE 2000 brought together research specialists from >basic research, as well as from research & development engineering, all of whom are working on devices such as thin-film transistors, micro-electromechanical systems, or sensors and actuators. In particular, ten internationally recognized scientists (J. Morante, S.Périchon, M. Konagai, S. Wagner, R. Hagenbeck, D.A. Bonnell, G. Horowitz, T.Fuyuki, J. Kocka and V. Chuwere) were invited to review their work on several interesting and promising aspects of the subject: such as, micro-systems, solar cells, thin-film transistors, organic polycrystalline devices and polycrystalline ceramics.


Edited by: H. Tomokage and T. Sekiguchi
Online since: April 2001
Description: The characterisation of semiconductors is of key importance in preparing and applying semiconductors in industry.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The present work deals with theoretical and experimental topics which are related to the assessment of microstructures in semiconductors by means of beam injection and related methods.


Edited by: Marc Heyns, Marc Meuris and Paul Mertens
Online since: January 2001
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The proceedings of the Fifth International Symposium on Ultra Clean Processing of Silicon Surfaces cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).


Edited by: F.A. Lewis and A. Aladjem
Online since: August 2000
Description: Understanding the behaviour of hydrogen in metals is one of the most pressing research tasks in the physical sciences. The embrittling effect of hydrogen in mild steel was recognised from the very beginnings of the Industrial Revolution, and its effects still plague modern alloys during either fabrication or use. At the same time, the tendency of certain alloys to form stable hydrides in a reversible manner holds out the promise of the safe storage of hydrogen in vehicles and therefore the prospect of non-polluting transport and a true 'hydrogen economy'. Researchers in this field will therefore welcome the publication of this 2-volume set, "Hydrogen Metal Systems I & II", which presents comprehensive information and critical data concerning ionic and metallic hydrides; all conveniently based upon a periodic-table layout.


Edited by: M. Danielewski
Online since: January 2000
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book covers the principal topics of basic and applied research on diffusion-controlled transport phenomena in metals, ceramics and other systems. Particular attention is paid to diffusional mass transport, reactive diffusion, interdiffusion and phase transformations. Further attention is paid to the practical aspects of applying a deeper understanding of diffusion and reaction mechanisms to the development of materials with improved service properties.

The theory of interdiffusion, reactive diffusion and defect phenomena, the predictions of computer models, and other theoretical studies are extensively covered. Altogether, this again makes the present work an up-to-date and convenient source of information on current trends in the field of solid-state diffusion.


Edited by: R.P. Agarwala
Online since: October 1999
Description: With the continuing evolution of fabrication techniques and new structures for semiconducting materials, the list of new defect phenomena has also increased apace. The present book discusses point defects, defect-assisted diffusion, metal impurity additions, metastable defects, magnetic hyperfine interaction of deep donors in compound semiconductors, and oxygen and hydrogen impurity defects.


Edited by: H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Online since: August 1999
Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.


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