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Freeze el. firstly proposed a fully coupled physically-based spatially-distributed theoretical system about the interaction of surface groundwater flow system until 1969 to form the interaction of coupled system [2].
[4] Al-Thani A A, Beaven R P, White J K.
[6] Dougherty W J, Fleming N K, Cox J W, et al.

Al-Bsharat, Influence of burnishing process on surface roughness, hardness, and microstructure of some non-ferrous metals, Wear, 199 (1996) 1-8
El-Tayeb, K.O.
Al-Dhifi, Improvement in the wear resistance of brass components by the ball burnishing process, J.

El-Shenawy.
Amirkhanova, et al.
Silva et al.

With regard to the ectoine production technology, Onraedt et al. [4]optimized the medium compositions and fermentation conditions, including the types of carbon sources, the concentrations of yeast extract and NaCl, as well as pH.
Onraedt et al. also described the time course of ectoine fermentation by Brevibacterium epidermis in 2 L fermentor [4].
Forum Vol. 36 (2007), p. 14 [8] Luedeking R, Piret EL: J Biochem Microbiol Technol Eng.

A conductor of length L and cross-section A has an electrical resistance, Rel = el L/A, where el is the specific electrical conductivity.
(26) When Eel increases, it attains a range of value where Ohm's law is no longer valid or, in other words, el varies with Eel.
This has been carefully discussed by Cahill et. al. [23] in the framework of nanoscale thermal transport.
Cahill D G et al : J.

The graphene FET electrical performance can be improved by dielectric screening[14] by depositing high dielectric material on top of graphene, ionic screening by inversing the device to the special solution [15], or etching away the under lying SiO2 [16], et.al..
Rumyantsev S et.al [18] examined the ambient effects on noise characteristics of graphene and Yinxiao Yang et.al [12] studied the influence of atmosphere on electrical transport in graphene, they found that the atmospheric doping was hole-doping within several minutes of O2 or ambient exposure.
Morozov, et al: Science Vol. 306 (2004), p. 666 [2] Britnell L, Gorbachev R V, Jalil R, et al: Science Vol. 335 (2012), p. 947 [3] Rumyantsev S, Liu G, Shur M S, et al: Nano Letters Vol. 12 (2012), p. 2294 [4] El-Kady M F, Strong V, Dubin S, et al: Science Vol. 335 (2012), p. 1326 [5] Chen H-Y and Appenzeller J: Nano Letters Vol. 12 (2012), p. 2067 [6] Shuai Wang, Priscilla Kailian Ang, Ziqian Wang, et al: Nano Letters Vol. 10 (2010), p. 92 [7] G.
Jang, et al: Nature Vol. 457 (2009), p. 706 [9] Wassei J K, Mecklenburg M, Torres J A, et al: small Vol. 8 (2012), p. 1289 [10] Lee Y g, Kang C G, Jung U J, et al: Applied Physics Letters Vol. 98 (2011), p. 183508 [11] Ryu S, Liu L, Berciaud S, et al: Nano Letters Vol. 10 (2010), p. 4944 [12] Yang Y, Brenner K and Murali R: Carbon Vol. 50 (2012), p. 1727 [13] Kim B J, Jang H, Lee S K, et al: Nano Letters Vol. 10 (2010), p. 3464 [14] Chen F, Xia J, Ferry D K, et al: Nano Letters Vol. 9 (2009), p. 2571 [15] Chen F, Xia J and Tao N: Nano Letters Vol. 9 (2009), p. 1621 [16] Du X, Skachko I, Barker A, et al: nature Nanotechnol Vol. 3 (2008), p. 491 [17] Chen J-H, Jang C, Adam S, et al: Nature Physics Vol. 4 (2008), p. 377 [18] Rumyantsev S, Liu G, Stillman W, et al: Journal of Physics: Condensed Matter Vol. 22 (2010), p. 395302 [19] Gang P, YingQiu Z, YanLan H, et al: SCIENCE CHINA Physics,Mechanics & Astronomy Vol. 55 (2012), p. 1 [20] Reina A, Jia X, Ho J, et al: Nano Letters
Vol. 9 (2009), p. 30 [21] Geringer V, Liebmann M, Echtermeyer T, et al: Physics Review Letter Vol. 102 (2009), p. 076102 [22] Novikov D S: Applied Physics Letters Vol. 91 (2007), p. 102102 [23] Huard B, Stander N, Sulpizio J A, et al: Physical Review B Vol. 78 (2008), p. 121402

The Al−5wt.
Master alloys of Al-10wt.
%Sr and Al-10wt.
The Al−5wt.
Materials Unmodified Sr-modified La-modified FAS RD FAS RD FAS RD YS (MPa) 249.2±4.9 253.4±10.1 255.5±3.6 259.7±4.2 250.1±4 247.3±4.3 UTS (MPa) 308.6±7.1 313.7±3.5 312.5±7.8 326±3.5 292.5±8.9 321±5.8 El. (%) 3.3±0.5 3.5±1 3.5±0.4 5.6±0.3 3.2±0.6 4.7±0.9 Fig.4 The fracture surfaces of the T6-temperd A356−3wt.

Al Ka (1486.6eV) X-ray source was used as the exciting source for photoelectrons.
By using photoelectrochemical current response, Shinji Fujimoto et al [11] have demonstrated that the n-type semiconductor behavior of is derived from the outer hydroxide layer, while the p-type semiconductor is from the inner oxide layer in Fig. 6.
Machioa, El-Sayed M.

References [1] Khalifa Al-Azri, Roslan Md Nor, Y.m.
Al-Ruqeishi.
El-Hofy, Journal of material science Letters, (1988) 453-456 [20] S.

Hayashi et al. [2] and Pai and Raghavan [15] have developed new Ohm’s law models by assuming that the equivalent electrical network is established and thermal conductivity of the system is obtained from the thermal-electrical analog.
Measurements and modeling of thermal conductivity for dense iron oxide and porous iron agglomerates in stepwise reduction have been done by Tomohiro et al. [16].
El-Geassy, and S.