Description: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging.

Ultra Clean Processing of Semiconductor Surfaces XIV

Edited by: Dr. Paul W. Mertens, Marc Meuris and Marc Heyns

Online since: August 2018

Description: The 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018, Leuven, Belgium, September 3-5, 2018) was organized by IMEC and the scope of this symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrated Circuit manufacturing. This collection will be interesting and useful for experts in the field of microelectronics.

Silicon Carbide and Related Materials 2009

Edited by: Anton J. Bauer, Peter Friedrichs, M. Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Online since: April 2010

Description: The 13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009) was held at the Congress Center, Nürnberg (CCN), Germany from October 11 to 16, 2009. This was a truly important and exciting event in the history of wide-bandgap semiconductors, as 503 scientists and engineers from 29 countries reported and discussed the progress made during the previous two years.

Ultra Clean Processing of Silicon Surfaces VI

Edited by: Marc Heyns, Dr. Paul W. Mertens and Marc Meuris

Online since: May 2003

Description: The issues addressed by the Sixth International Symposium on the Ultra Clean Processing of Silicon Surfaces included all aspects of ultra-clean Si-technology, cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This covered studies of Si-surface chemistry and topography and its relationship to device performance and process yield, cleaning in relationship to new gate stacks, cleaning at the interconnect level, resist stripping and polymer removal, cleaning and contamination control of various new materials, wafer backside cleaning and cleaning following Chemical-Mechanical-Polishing (CMP).

Defects and Diffusion in Semiconductors III

Edited by: Dr. David J. Fisher

Online since: August 2000

Description: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.

Plasma Properties, Deposition and Etching

Edited by: J. J. Pouch and S. A. Alterovitz

Online since: October 1993

Description: Containing 42 invited papers, this fine book covers a broad range of subjects on plasmas and applications.
In the first section, plasma properties and methods used to characterize the plasma are addressed. Many of these papers also cover deposition or etching of particular materials. The second part focuses on the application of various plasma techniques used to deposit thin films, and on the resulting film properties. Finally, the application of plasma etching to the fabrication of silicon-based circuits, plasma etching of III-V compound semiconductors and other processing applications are discussed in the third and last section.