Study on the CMP Pad Life with its Mechanical Properties

Pei Lum Tso; Zhe Hao Huang; Sheng Wei Chou; Cheng Yi Shih

doi:10.4028/www.scientific.net/KEM.389-390.481

Paper Titles

Material Removal Mechanism of Chemo-Mechanical Grinding (CMG) of Si Wafer by Using Soft Abrasive Grinding Wheel (SAGW)
p.459

Subsurface Structures of Monocrystalline Silicon Generated by Nanogrinding
p.465

Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation
p.469

Study on Adhesion Removal Model in CMP SiO₂ ILD
p.475

Study on the CMP Pad Life with its Mechanical Properties
p.481

Polishing Characteristics on Silicon Wafer Using Fixed Nano-Sized Abrasive Pad
p.487

A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition
p.493

Effect of Conditioning Parameters on Surface Non-Uniformity of Polishing Pad in Chemical Mechanical Planarization
p.498

Achieving a Damage-Free Polishing of Mono-Crystalline Silicon
p.504

HomeKey Engineering MaterialsKey Engineering Materials Vols. 389-390Study on the CMP Pad Life with its Mechanical...

Study on the CMP Pad Life with its Mechanical Properties

Abstract:

The primary consumables in chemical mechanical polishing (CMP) are the polishing pad and the slurry. The polishing pad significantly influences the stability of the polishing process and the cost of consumables (CoC). During the polishing process, a diamond dresser must be frequently employed to remove the debris to prevent accumulation, a process known as pad conditioning. In this paper, we investigated the physical properties of the CMP pad such as compressibility, thickness, and surface roughness. The difference between new and used pads has been studied. Conclusively, conditioning via a diamond dresser will extend pad life and reduce CoC.