A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition

Sung Chul Hwang; Jong Koo Won; Jung Taik Lee; Eun Sang Lee

doi:10.4028/www.scientific.net/KEM.389-390.493

Paper Titles

Complete Recovery of Subsurface Structures of Machining-Damaged Single Crystalline Silicon by Nd:YAG Laser Irradiation
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Study on Adhesion Removal Model in CMP SiO₂ ILD
p.475

Study on the CMP Pad Life with its Mechanical Properties
p.481

Polishing Characteristics on Silicon Wafer Using Fixed Nano-Sized Abrasive Pad
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A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition
p.493

Effect of Conditioning Parameters on Surface Non-Uniformity of Polishing Pad in Chemical Mechanical Planarization
p.498

Achieving a Damage-Free Polishing of Mono-Crystalline Silicon
p.504

Effect of Polishing Time and Pressure on Polishing Pad Performance
p.510

Polishing Characteristics of CMP for Oxygen Free Copper with Manganese Oxide Abrasives
p.515

HomeKey Engineering MaterialsKey Engineering Materials Vols. 389-390A Study on Statistical Analysis of Si-Wafer...

A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition

Abstract:

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is mainly affected by the many process parameters. For decreasing the surface roughness, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by the statistical analysis of the process parameters.

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Periodical:

Key Engineering Materials (Volumes 389-390)

Pages:

493-497

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.389-390.493

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Online since:

September 2008

Authors:

Sung Chul Hwang, Jong Koo Won, Jung Taik Lee, Eun Sang Lee

Keywords:

Box-Behnken Method, Final Polishing Processing, Regression Analysis, Si Wafer, Surface Roughness (SR)

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References

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