Effect of Conditioning Parameters on Surface Non-Uniformity of Polishing Pad in Chemical Mechanical Planarization

N. Qin; Dong Ming Guo; Ren Ke Kang; Feng Wei Huo

doi:10.4028/www.scientific.net/KEM.389-390.498

Paper Titles

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Effect of Conditioning Parameters on Surface Non-Uniformity of Polishing Pad in Chemical Mechanical Planarization
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 389-390Effect of Conditioning Parameters on Surface...

Effect of Conditioning Parameters on Surface Non-Uniformity of Polishing Pad in Chemical Mechanical Planarization

Abstract:

The calculating model of surface non-uniformity of polishing pad and the kinematical model between polishing pad and conditioner are initially established. Then the effects of several conditioning parameters were investigated by using the two models. The results of simulation and calculation show that the width ratio of diamond band of conditoner and the rotation speed at the same speed ratio between pad and conditioner have little effect on the surface non-uniformity of polishing pad, while at high non-integer rotation speed ratio, the surface non-uniformity of polishing pad is better than that at low integer speed ratio. The research results are available to select appropriate conditioning parameters especially for the stringent requirement of within-wafer non-uniformity in next generation IC.

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Periodical:

Key Engineering Materials (Volumes 389-390)

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498-503

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https://doi.org/10.4028/www.scientific.net/KEM.389-390.498

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Online since:

September 2008

Authors:

N. Qin, Dong Ming Guo, Ren Ke Kang, Feng Wei Huo

Keywords:

Conditioner, Non-Uniformity, Polishing Pad, Rotation Direction, Rotational Speed, Speed Ratio

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