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HomeKey Engineering MaterialsKey Engineering Materials Vols. 389-390Achieving a Damage-Free Polishing of...

Achieving a Damage-Free Polishing of Mono-Crystalline Silicon

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Abstract:

This paper experimentally investigates the micro-structural changes in mono-crystalline silicon induced by abrasive polishing with abrasive grain size and applied pressure. It was found that while the large abrasives of about 15 μm and 300 nm in diameter induce both residual amorphous phase and various residual crystalline structures and dislocations, the finer abrasives of about 50 nm in diameter only produce residual amorphous phase in the top subsurface of polished silicon. With the fine abrasives, reducing applied pressure reduces the amorphous layer thickness, and a damage-free polishing can be achieved at the pressure of 20 kPa.

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Advances in Abrasive Technology XI

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Periodical:

Key Engineering Materials (Volumes 389-390)

Pages:

504-509

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.389-390.504

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Online since:

September 2008

Authors:

A.Q. Biddut, Liang Chi Zhang, Y.M. Ali, Zong Wen Liu

Keywords:

Phase Transformation, Polishing, Silicon, TEM

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© 2009 Trans Tech Publications Ltd. All Rights Reserved

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[1] I. Zarudi and L.C. Zhang, Advances in Abrasive Technology (Singapore: World Scientific) ( L.C. Zhang and N. Yasunaga, eds) (1997) p.33.

[2] Z.J. Pei, G.R. Fisher, M. Bhagavat, S. Kassir, Int. J. Machine Tools and Manufacture Vol. 45 (2005), p.1140.

[3] H. Eda, L. Zhou, H. Nakano, R. Kondo, J. Shimizu, Annals of CIRP Vol. 50/1 (2001), p.225.

[4] L.C. Zhang and H. Tanaka, Tribol. Int. Vol. 31 (1998), p.425.

[5] I. Zarudi and L.C. Zhang, J. Mater. Process. Technol. Vol. 84 (1998), p.149.

[6] I. Zarudi and L.C. Zhang, J. Mater. Sci. Lett. Vol. 15 (1996), p.586.

[7] R. R. Kunz, J. Mater. Res Vol. 11 (1996), p.1228.

[8] T. R. Mchedlidze, I. Yonenaga and K. Sumino, Mat. Sci. Forum Vol. 196-201(1995), p.1841.

[9] L.C. Zhang and I. Zarudi, Wear Vol. 229 (1999), p.669.

[10] I. Zaruid, J. Zou and L.C. Zhang, Appl. Phys. Lett. Vol. 82 (2003), p.874.

[11] J. Xu, J.B. Luo, L.L. Wang and X.C. Lu, Tribol. Int. Vol. 40 (2007), p.285.

[12] L.C. Zhang and H. Tanaka, JSME International, Series A: Solid Mech. Mater. Eng. Vol. 42 (1999), p.546.

[13] X. Han, Appl. Sur. Sci., Vol. 253 (2007), p.6211.

[14] I. Zarudi, L.C. Zhang, W.C.D. Cheong, T.X. Yu, Acta Mat. Vol. 53 (2005), p.4795.

[15] I. Zarudi, L.C. Zhang, J. Mat. Res. Vol. 19 (2004), p.332.

[16] I. Zarudi and B.S. Han, J. Mater. Process. Technol. Vol. 140 (2003), p.641.

[17] L. C. Zhang and I. Zarudi, Int. J. Mech. Sci. Vol. 43 (2001), p. (1985).