Effect of Polishing Time and Pressure on Polishing Pad Performance

A.Q. Biddut; Liang Chi Zhang; Y.M. Ali

doi:10.4028/www.scientific.net/KEM.389-390.510

Paper Titles

Study on Adhesion Removal Model in CMP SiO₂ ILD
p.475

Study on the CMP Pad Life with its Mechanical Properties
p.481

Polishing Characteristics on Silicon Wafer Using Fixed Nano-Sized Abrasive Pad
p.487

A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition
p.493

Effect of Conditioning Parameters on Surface Non-Uniformity of Polishing Pad in Chemical Mechanical Planarization
p.498

Achieving a Damage-Free Polishing of Mono-Crystalline Silicon
p.504

Effect of Polishing Time and Pressure on Polishing Pad Performance
p.510

Polishing Characteristics of CMP for Oxygen Free Copper with Manganese Oxide Abrasives
p.515

Scale Effect of Nano-Indentation of Silicon – A Molecular Dynamics Investigation
p.521

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Effect of Polishing Time and Pressure on Polishing Pad Performance

Abstract:

This paper experimentally investigates the effect of time and pressure on the condition of polishing pads and the material removal rate (MRR) of single crystal silicon. It was found that as the pad deteriorates with time, MRR decreases. Surfaces with a required quality can only be achieved before the texture deterioration reaches a critical limit. At a higher pressure, 25 kPa, deterioration is slower, and the effective life of pads and MRR is enhanced.