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Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
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Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers
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Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD
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High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
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Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
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Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation
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Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
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Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
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Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System
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Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

183-186

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.183

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Online since:

April 2002

Authors:

Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Cold-Wall CVD, Isothermal Capacitance Transient Spectroscopy ICTS, Photoluminescence (PL)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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