Paper Titles
Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD
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High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
p.179
Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
p.183
Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation
p.187
Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
p.191
Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
p.195
Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System
p.199
Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
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Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
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Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

191-194

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.191

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Online since:

April 2002

Authors:

Jie Zhang, Urban Forsberg, M. Isacson, Alexsandre Ellison, Anne Henry, Olof Kordina, Erik Janzén

Keywords:

Chemical Vapor Deposition (CVD), Doping, Hot-Wall CVD, Morpholoy, Rotation, Uniformity

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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