Paper Titles

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
p.195

Hot-Wall CVD Growth of 4H-SiC Using Si₂Cl₆+C₃H₈+H₂ System
p.199

Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
p.203

Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
p.207

Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor
p.211

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
p.215

Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
p.219

Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
p.223

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
p.227

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Vapor-Phase Epitaxial Growth of n-Type SiC Using...

Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

211-214

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.211

Citation:

Cite this paper

Online since:

April 2002

Authors:

Rong Jun Wang, I. Bhat, T. Paul Chow

Keywords:

Epitaxial Growth, Phosphorus Doping, Silicon Carbide (SiC), Site Competition Effect

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: