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Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
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Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor
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Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
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Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
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Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
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Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
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Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
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The Effect of Epitaxial Growth on Warp of SiC Wafers
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Predicting Growth Rates of SiC Epitaxial Layers...

Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

219-222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.219

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Online since:

April 2002

Authors:

Örjan Danielsson, S. Jönsson, Anne Henry, Erik Janzén

Keywords:

Chemical Vapor Deposition (CVD), Epitaxial Growth, Growth Rate, Simulation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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