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Semiconductor Materials and Technology

Solid State Phenomena Volume 55

• Papers
• Abstracts

• p1 Epitaxial Growth and Characterization of Nitride Semiconductors   [ 268 K ]
  Authors: A. Yoshida
• p7 Crystalline Bi₂Se₃ Thin Films: Growth and Properties   [ 115 K ]
  Authors: L.P. Deshmukh, D.S. Sutrave, K.M. Garadkar, G.S. Shahane, R.N. Mulik
• p10 Growth of High Purity GaAs Layers by Vapour Phase Epitaxy   [ 172 K ]
  Authors: K. Chand, R.K. Purohit
• p14 Amorphous Chalcogenide Semiconductors: The Role of Bismuth Addition   [ 382 K ]
  Authors: C. Vautier
• p20 Suppression of Auger Recombination by Strain in Sb Based mid-IR Lasers   [ 326 K ]
  Authors: B. Grietens, S.C. Jain, C. Van Hoof, S. Németh, P. Van Daele, G. Borghs
• p26 Study of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET Characteristics   [ 118 K ]
  Authors: Nandita Dasgupta, Srinivasa Murthy G.B
• p29 Physical Principles of New Devices Related to Giant Electric Field Effect in MDS Structure   [ 92 K ]
  Authors: M. Levin, V. Sandomirsky, I. Schlimak
• p32 Raman Spectroscopic Investigation of ZnO and Doped ZnO Films, Nanoparticles and Bulk Material at Ambient and High Pressures   [ 363 K ]
  Authors: S.K. Sharma, G.J. Exarhos
• p38 Microprocessing of Electronic Materials Using Short Wavelength Lasers   [ 143 K ]
  Authors: K. Sugioka, K. Toyoda
• p40 Band Gap Measurement of the Sintered Cd_x Se_1-x Films from Reflectance Measurement   [ 83 K ]
  Authors: S.K. Sharma, Vijay Kumar, S.K. Kaushish, T.P. Sharma