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Defects and Diffusion in Semiconductors

Defect and Diffusion Forum Volumes 183 - 185

• Papers
• Abstracts

• p1 Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy   [ 1 M ]
  Authors: C.C. Ling, C.D. Beling, M. Gong, X.D. Chen, S. Fung
• p25 Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon   [ 1 M ]
  Authors: Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama
• p41 Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon   [ 764 K ]
  Authors: A.P. Knights, Paul G. Coleman
• p53 Diffusion Processes in Strained Silicon Germanium Island Structures   [ 556 K ]
  Authors: T. Walther
• p61 Damage in III-V Semiconductors from very Low-Energy Process Plasmas   [ 954 K ]
  Authors: Mahfuzur Rahman
• p77 Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates   [ 378 K ]
  Authors: Y. Takano, S. Fuke
• p85 Point Defects in III-V Compound Semiconductors   [ 387 K ]
  Authors: N. Chen
• p95 On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)   [ 487 K ]
  Authors: R. Koch, B. Wassermann, G. Wedler
• p103 Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction   [ 1 M ]
  Authors: N. Mainzer, E. Zolotoyabko
• p127 Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching   [ 1 M ]
  Authors: F. Frost, G. Lippold, A. Schindler, F. Bigl