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Defects and Diffusion in Semiconductors

Defect and Diffusion Forum Volumes 183 - 185

• Papers
• Abstracts

• p1 Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy   [ 1 M ]
  Authors: C.C. Ling, C.D. Beling, M. Gong, X.D. Chen, S. Fung
• p25 Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon   [ 1 M ]
  Authors: Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama
• p41 Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon   [ 764 K ]
  Authors: A.P. Knights, Paul G. Coleman
• p53 Diffusion Processes in Strained Silicon Germanium Island Structures   [ 556 K ]
  Authors: T. Walther
• p61 Damage in III-V Semiconductors from very Low-Energy Process Plasmas   [ 954 K ]
  Authors: Mahfuzur Rahman
• p77 Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates   [ 378 K ]
  Authors: Y. Takano, S. Fuke
• p85 Point Defects in III-V Compound Semiconductors   [ 387 K ]
  Authors: N. Chen
• p95 On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)   [ 487 K ]
  Authors: R. Koch, B. Wassermann, G. Wedler
• p103 Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction   [ 1 M ]
  Authors: N. Mainzer, E. Zolotoyabko
• p127 Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching   [ 1 M ]
  Authors: F. Frost, G. Lippold, A. Schindler, F. Bigl
• p147 Defects and Morphologies in In_0.8Ga_0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors   [ 381 K ]
  Authors: J. Wu, F. Lin
• p153 Diffusion of Zinc in InP, InAsP and InGaAs by the Metal-Organic Vapor-Phase Diffusion Technique   [ 542 K ]
  Authors: M. Wada, K. Sakakibara, T. Umezawa, S. Nakajima, S. Araki, T. Kudou, T. Ueda
• p163 Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon   [ 362 K ]
  Authors: J. Wong-Leung, S. Fatima, C. Jagadish, J.D. FitzGerald
• p171 Diffusion and Electrical Properties of Nickel in Silicon   [ 457 K ]
  Authors: S. Tanaka, T. Ikari, H. Kitagawa
• p181 XPEEM Study of Liquid Au-Si Droplets on Si(111) near to the Eutectic Point   [ 534 K ]
  Authors: B. Ressel, S. Heun, T. Schmidt, K.C. Prince