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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

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• p55 Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC   [ 308 K ]
  Authors: Edward M. Sanchez, V.D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski
• p59 Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes   [ 326 K ]
  Authors: I.I. Khlebnikov, Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Tangali S. Sudarshan
• p63 Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide   [ 242 K ]
  Authors: Edward M. Sanchez, V.D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski
• p67 Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT   [ 379 K ]
  Authors: Seo Young Ha, Gregory S. Rohrer, Marek Skowronski, V.D. Heydemann, David W. Snyder
• p71 Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation   [ 280 K ]
  Authors: Peter J. Wellmann, Matthias Bickermann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker
• p75 SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique   [ 218 K ]
  Authors: Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai
• p79 Role of Temperature Gradient in Bulk Crystal Growth of SiC   [ 218 K ]
  Authors: Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, Nikolay K. Yushin
• p83 Pressure Effect in Sublimation Growth of Bulk SiC   [ 309 K ]
  Authors: Yasuo Kitou, Wook Bahng, Shinichi Nishizawa, Shigehiro Nishino, Kazuo Arai
• p87 Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT   [ 162 K ]
  Authors: D. Schulz, K. Irmscher, J. Dolle, W. Eiserbeck, Timo Müller, H. J. Rost, D. Siche, Günter Wagner, Jürgen Wollweber
• p91 Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics   [ 240 K ]
  Authors: Alexander Pisch, Ana Maria Ferraria, Christian Chatillon, Elisabeth Blanquet, Michel Pons, Claude Bernard, Mikhail Anikin, Roland Madar
• p95 Considerations on the Crystal Morphology in the Sublimation Growth of SiC   [ 217 K ]
  Authors: P. Råback, Rositza Yakimova, Mikael Syväjärvi, T. Iakimov, Risto M. Nieminen, Erik Janzén
• p99 Shape of SiC Bulk Single Crystal Grown by Sublimation   [ 284 K ]
  Authors: Shinichi Nishizawa, Yasuo Kitou, Wook Bahng, Naoki Oyanagi, Muhammad Nasir Khan, Kazuo Arai
• p103 Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid   [ 289 K ]
  Authors: Wook Bahng, Yasuo Kitou, Shinichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino
• p107 Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes   [ 294 K ]
  Authors: Boris M. Epelbaum, Dieter Hofmann, M. Müller, Albrecht Winnacker
• p111 Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method   [ 325 K ]
  Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl