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Beam Injection Assessment of Microstructures in Semiconductors

Solid State Phenomena Volumes 78 - 79

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• p231 Effects of Lattice Defects on Degradation of Flash Memory Cell   [ 173 K ]
  Authors: K. Kobayashi, H. Ohyama, Masashi Nakabayashi, Eddy Simoen, C. Claeys, K. Kudou, M. Yoneoka, K. Hayama, S. Kohiki
• p237 Electron Beam Induced Current Contrast of Oxygen Precipitation Related Defects in Czochralski Silicon   [ 726 K ]
  Authors: Toshiaki Ono, Tsutomu Sasaki, Hary Kirk, George A. Rozgonyi
• p253 Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination   [ 311 K ]
  Authors: Winfried Seifert, Martin Kittler
• p259 Defect Characterization in Multicrystalline Silicon Using Scanning Techniques   [ 423 K ]
  Authors: Sergei S. Ostapenko, I. Tarasov, Juris P. Kalejs
• p267 Minority Carrier Lifetime Scan Maps Applied to Metallic Impurity Detection in Silicon Wafers   [ 413 K ]
  Authors: Olivier Palais
• p275 Surface Concentration Dependence of Diffusion Profile Shape for Phosphorus in Si   [ 230 K ]
  Authors: Y. Banno, T. Ichino, H. Uchida, Masaya Ichimura, Eisuke Arai, Masayuki Yoshida
• p281 Rapid Diffusion of Titanium along Grain Boundaries in Polysilicon during Electron Beam Evaporation   [ 394 K ]
  Authors: Katsuhiro Yokota, Takamasa Kobayashi, Kazuhiro Nakamura
• p289 EBIC/XPS Study of the Antimony Equilibrium Segregation at Germanium Surface   [ 232 K ]
  Authors: N. Tabet
• p297 Luminescence Studies on In_xGa_1-xN/GaN Multiple Quantum Wells by Selective Excitation Spectroscopy   [ 201 K ]
  Authors: C. Sasaki, M. Iwata, Y. Yamada, Tsunemasa Taguchi, S. Watanabe, M.S. Minsky, T. Takeuchi, R. Schneider, N. Yamada
• p301 Cathodoluminescence of the Composite Nanoscale Dendrite - Like GaAs-Ge Epitaxial Heterostructure   [ 217 K ]
  Authors: V.P. Ulin, M.V. Zamoryanskaya, F.Yu. Soldotenkov, S.G. Konnikov
• p307 SEM-Motion Picture System Observation of Moving High-Field Domains in Semi-Insulating GaAs   [ 299 K ]
  Authors: R. Tabei, J. Matsuoka, T. Ikeno, Y. Tokumaru
• p313 Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping   [ 296 K ]
  Authors: Katsuhiro Yokota, Youji Tachino, Shinya Shimizu, Kazuhiro Nakamura, Yukihira Sekine, Masanori Watanabe, Hideto Takano
• p319 Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs   [ 308 K ]
  Authors: K. Kobayashi, H. Ohyama, T. Hakata, T. Kudou, K. Shigaki, H. Takizawa, S. Kohiki, Y. Uwatoko
• p325 Secondary Electron Emission Induced by Deep Level Defects in GaAs   [ 427 K ]
  Authors: F. Iwase, Yoshikazu Hayashi
• p331 Interaction of Copper and Sulfur with Dislocations in GaAs   [ 544 K ]
  Authors: N. Engler, H.S. Leipner, R.F. Scholz, Jürgen Schreiber, P. Werner