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Papers by Author: Koh Masahara

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Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Authors: Kazutoshi Kojima, Toshiyuki Ohno, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Mitsuhiro Kushibe, Koh Masahara, Yuuki Ishida, Sadafumi Yoshida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

1053

Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

Authors: Makato Fujimaki, Rudi Ono, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Takashi Shinohe, Hideyo Okushi, Kazuo Arai

851

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Authors: Toshiyuki Ohno, Hirotaka Yamaguchi, Kazutoshi Kojima, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Sadafumi Yoshida

447

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Authors: Mitsuru Hasegawa, Akihiro Miyauchi, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Toshiyuki Ohno, Johji Nishio, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

227

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Authors: Johji Nishio, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Toshiyuki Ohno, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

215

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

Authors: Kazutoshi Kojima, Takaya Ohno, Junji Senzaki, Kenji Fukuda, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

195

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Authors: Koh Masahara, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Johji Nishio, Kazutoshi Kojima, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

179

Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates

Authors: Koh Masahara, Mitsuhiro Kushibe, H. Ohno, Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

135

Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure

Authors: Koh Masahara, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

1037

Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

Authors: Mitsuhiro Kushibe, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Koh Masahara, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

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