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Articles by author: Mikhail R. Baklanov

• Characterization of HF Cleaning of Ion-Implanted Si Surfaces
  Published in: Ultra Clean Processing of Silicon Surfaces IV (p271)
• Composition, Structure and Modification of Passivating Films on Semiconductors Deposited at Low Temperatures
  Published in: Passivation of Metals and Semiconductors (p65)
• Effect of Chemical Solution on the Stability of Low-k Films
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p349)
• Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p317)
• Evaluation of Post Metal Etch Cleaning by Analyzing the Chemical Compositions and Distributions on the Etched Al Surface
  Published in: Ultra Clean Processing of Silicon Surfaces IV (p177)
• HF Based Solutions for HfO₂ Removal; Effect of pH and Temperature on HfO₂: SiO₂ Etch Selectivity
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p97)
• Modification of Low-K SiCOH Film Porosity by a HF Solution
  Published in: Ultra Clean Processing of Silicon Surfaces V (p135)
• Post Dry-Etch Cleaning Issues of an Organic Low-K Dielectric
  Published in: Ultra Clean Processing of Silicon Surfaces IV (p89)
• Silicon Surface Cleaning after Spacer Dry Etching
  Published in: Ultra Clean Processing of Silicon Surfaces V (p303)
• Study of a Metal Gate and Silicon Selective “Dry Ash Only” Process for Combined Extension and Halo Implanted Photo Resist
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p113)
• The Optimization of the Cleaning to Remove Residual Bonds of Si-C and Si-F after Fluorocarbon Plasma Etch on the Silicon Surface
  Published in: Ultra Clean Processing of Silicon Surfaces IV (p291)
• XPS Study of the Cleaning Efficiency by Ozone Processes of the Protective Films Formed by Reactive Ion Etching of Co and Ti Silicide
  Published in: Ultra Clean Processing of Silicon Surfaces IV (p139)