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Papers by Author: Seiji Suzuki

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4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates

Authors: Mitsuo Okamoto, Seiji Suzuki, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda

Abstract: We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel mobility of a lateral test MOSFET on a C-face was 41 cm2/Vs, which was much higher than 5 cm2/Vs for that on a Si-face. The specific on-resistance of the lateral RESURF MOSFET on a C-face was improved to 79 mΩcm2 as comparison with 2400 mΩcm2 for Si-face. The breakdown voltage was 490V for Si-face and 460V for C-face, which was 82% and 79% of the designed breakdown voltage of 600V, respectively. The device breakdown occurred destructively at the gate electrode edge.

805

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Authors: Shinsuke Harada, Mitsuo Okamoto, Tsutomu Yatsuo, Kazuhiro Adachi, Kenji Suzuki, Seiji Suzuki, Kenji Fukuda, Kazuo Arai

1421

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Authors: Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda

753

Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface

Authors: Tetsuo Hatakeyama, Shinsuke Harada, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kenji Fukuda, Takashi Shinohe, Kazuo Arai

1081

Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

Authors: Shinsuke Harada, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kazuhiro Adachi, Kenji Fukuda, Kazuo Arai

1069

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Authors: Junji Senzaki, Kenji Fukuda, Kazutoshi Kojima, Shinsuke Harada, Ryouji Kosugi, Seiji Suzuki, Takaya Suzuki, Kazuo Arai

1061

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing

Authors: Kenji Fukuda, Junji Senzaki, Mitsuhiro Kushibe, Kazutoshi Kojima, Ryouji Kosugi, Seiji Suzuki, Shinsuke Harada, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

1057

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Authors: Kazutoshi Kojima, Toshiyuki Ohno, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Mitsuhiro Kushibe, Koh Masahara, Yuuki Ishida, Sadafumi Yoshida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

1053

Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

Authors: Ryouji Kosugi, Mitsuo Okamoto, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Kazuo Arai

1049

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

Authors: Seiji Suzuki, Shinsuke Harada, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda

1045