Non-Standard FinFET Devices for Small Volume Sample Sensors

Michal Zaborowski; Daniel Tomaszewski; Lidia Łukasiak; A. Jakubowski

doi:10.4028/www.scientific.net/AMR.276.127

Paper Titles

Electrical Properties of High-K LaLuO₃ Gate Oxide for SOI MOSFETs
p.87

Effects of High–Energy Neutrons on Advanced SOI MOSFETs
p.95

Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
p.109

On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams
p.117

Non-Standard FinFET Devices for Small Volume Sample Sensors
p.127

3D SOI Elements for System-on-Chip Applications
p.137

Routes towards Novel Active Pressure Sensors in SOI Technology
p.145

Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiO_X Layers
p.159

Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon
p.167

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 276Non-Standard FinFET Devices for Small Volume...

Non-Standard FinFET Devices for Small Volume Sample Sensors

Abstract:

The presented work is focused on development of silicon wire-based MOS devices. .The original fabrication method has been described. Electrical performances of a variety of devices have been measured and evaluated. As these devices will be used as a platform for detectors of biochemical molecules, also tests of device operation oriented towards sensor applications have been done.