Routes towards Novel Active Pressure Sensors in SOI Technology

Abstract:

In this paper, novel pressure sensors approach is proposed and described. Active devices and oscillating circuits are directly integrated on very thin dielectric membranes as pressure transducers. Involved patterning of the membrane is supposed to cause a drop of mechanical robustness. Finite elements simulations are performed in order to better understand stress/strain distribution and as an attempt to explain the early burst of patterned membranes. Smart circuit designs are reported as solutions with high sensitivity and reduced footprint on membranes.

• Periodical: Advanced Materials Research (Volume 276)
• Pages: 145-155
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.276.145
• Online since: July 2011
• Authors: Benoit Olbrechts, Bertrand Rue, Thomas Pardoen, Denis Flandre, Jean Pierre Raskin
• Keywords: Finite Element Model (FEM), Micro-Electromechanical System (MEMS), PiezoMOS Effect, Piezoresistance, Smart Sensors, Thin Multilayered Dielectric Membranes

References

[1] W.P. Eaton and J.H. Smith: Smart Mater. Struct. Vol. 6 (1997), p.530.

[2] H.C. Lim, B. Schulkin, M.J. Pulickal, S. Liu, R. Petrova, G. Thomas, S. Wagner, K. Sidhu, J.F. Federici: Sensor Actuat. A Vol. 119 (2005), p.332.

DOI: 10.1016/j.sna.2004.10.012

[3] R. Singh, L.L. Ngo, H.S. Seng, F.N. Mok, in: Proceedings of the first IEEE international workshop on electronic design, test and applications (2002) p.181.

[4] H. -M. Jung, S. -B. Cho, J. -H. Lee, in: Proceedings of the fifth Russian–Korean international symposium on science and technology – IEEE ( 2001), p.202.

[5] C. Pedersen, S.T. Jespersen, J.P. Krog, C. Christensen, E.V. Thomsen: IEEE Sensors Journal Vol. 5 (2005), p.446.

[6] M. -T. Chau, D. Dominguez, B. Bonvalot, J. Suski: Sensor Actuat. A Vol. 60 (1997), p.86.

[7] J. Neumeister, G. Schuster, W. Von Münch: Sensor Actuat. Vol. 7 (1985), p.167.

[8] R. Schörner, M. Poppinger, J. Eibl: Sensor Actuat. A Vol. 21 (1990), p.73.

[9] Y. Wang, X. Zheng, L. Liu, Z. Li: IEEE Trans. Electron. Dev. Vol. 38 (1991), p.1797.

[10] B. Olbrechts, B. Rue, J. Suski, D. Flandre and J. -P. Raskin: Solid State Electronics Vol. 51 (2007), p.1229.

DOI: 10.1016/j.sse.2007.07.026

[11] B. Olbrechts, B. Rue, D. Flandre and J. -P. Raskin, in: Proceedings of the EUROSOI - 2008, Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits, Tyndall National Institute, Cork, Ireland, January 23-25 (2008).

[12] B. Bercu, L. Montès, F. Rochette, M. Mouis, X. Xin, and P. Morfouli: Appl. Phys. Let. Vol. 96 (2010), p.92107.

DOI: 10.1063/1.3343348

[13] M. Emam, S. Houri, D. Janvier-Vanhoenacker, J. -P. Raskin: J. Telecom. Informations. Technol. Vol. 4 (2009) p.18.

[14] C. Gallon, G. Reimbold, G. Ghibaudo, R. A. Bianchi, R. Gwoziecki, S. Orain, E. Robilliart, C. Raynaud, and H. Dansas: IEEE Trans. Electron. Dev. Vol. 51 (2004), p.1254.

DOI: 10.1109/ted.2004.831358

[15] Information on http: /www. memsnet. org/material.

[16] Information on http: /web. mit. edu/6. 777/www/matprops/pecvd_sio2. htm and /apcvd_sio2. htm.