3D SOI Elements for System-on-Chip Applications

Abstract:

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Base technology of local 3D SOI-structures formation has been proposed. Using this technology the electrical characteristics were developed and simulated of following original device elements for the microsystem applications: standard and matrix SOI CMOS-transistors with 3D gates, switching elements on Schottky diodes, contact electrodes with 3D surface, elements for highly sensitive integral accelerometers with registration of a field emission current, hermetical microcavities and microchannels under the surface of a SOI-substrate, field emission silicon microcathodes.

Info:

Periodical:

Edited by:

Alexei N. Nazarov and Jean-Pierre Raskin

Pages:

137-144

DOI:

10.4028/www.scientific.net/AMR.276.137

Citation:

I.T. Kogut et al., "3D SOI Elements for System-on-Chip Applications", Advanced Materials Research, Vol. 276, pp. 137-144, 2011

Online since:

July 2011

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Price:

$35.00

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