3D SOI Elements for System-on-Chip Applications

I.T. Kogut; A.A. Druzhinin; V.I. Holota

doi:10.4028/www.scientific.net/AMR.276.137

Paper Titles

Effects of High–Energy Neutrons on Advanced SOI MOSFETs
p.95

Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
p.109

On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams
p.117

Non-Standard FinFET Devices for Small Volume Sample Sensors
p.127

3D SOI Elements for System-on-Chip Applications
p.137

Routes towards Novel Active Pressure Sensors in SOI Technology
p.145

Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiO_X Layers
p.159

Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon
p.167

Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiO_X-Si Structures
p.179

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 2763D SOI Elements for System-on-Chip Applications

3D SOI Elements for System-on-Chip Applications

Abstract:

Base technology of local 3D SOI-structures formation has been proposed. Using this technology the electrical characteristics were developed and simulated of following original device elements for the microsystem applications: standard and matrix SOI CMOS-transistors with 3D gates, switching elements on Schottky diodes, contact electrodes with 3D surface, elements for highly sensitive integral accelerometers with registration of a field emission current, hermetical microcavities and microchannels under the surface of a SOI-substrate, field emission silicon microcathodes.

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Periodical:

Advanced Materials Research (Volume 276)

Pages:

137-144

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.276.137

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Online since:

July 2011

Authors:

I.T. Kogut, A.A. Druzhinin, V.I. Holota

Keywords:

Integrated Microsystem, SOI-Structures, Technology

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References

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DOI: 10.1149/1.2956075

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