Effects of High–Energy Neutrons on Advanced SOI MOSFETs

Abstract:

This work discusses the degradations caused by high-energy neutrons in advanced MOSFETs and compares them with damages created by γ-rays reviewing the original researches performed in our laboratory during last years [1-6]. Fully–depleted (FD) Silicon-on-Insulator (SOI) MOSFETs and Multiple-Gate (MuG) FETs with different geometries (notably gate lengths down to 50 nm) have been considered. The impact of radiation on device behavior has been addressed through the variation of threshold voltage (VT), subthreshold slope (S), transconductance maximum (Gmmax) and drain-induced barrier lowering (DIBL). First, it is shown that degradations caused by high-energy neutrons in FD SOI and MuG MOSFETs are largely similar to that caused by γ-rays with similar doses [1,3]. Second, it is revealed that, contrarily to their generally-believed immunity to irradiation [7, 8], very short-channel MuGFETs with thin gate oxide can become extremely sensitive to the total dose effect [2,3]. The possible reason is proposed. Third, a comparative investigation of high-energy neutrons effects on strained and non-strained devices demonstrates a clear difference in their response to high-energy neutrons exposure [6]. Finally, based on simulations and modeling of partially –depleted (PD) SOI CMOS D Flip-Flop, we show how radiation-induced oxide charge and interface states build-up can affect well-known tolerance of SOI devices to transient effects [4,5].

• Periodical: Advanced Materials Research (Volume 276)
• Pages: 95-105
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.276.95
• Online since: July 2011
• Authors: Valeria Kilchytska, Joaquin Alvarado, Otilia Militaru, Guy Berger, Denis Flandre
• Keywords: FET, Fully-Depleted (FD), High-Energy Neutrons, Interface Trap, MOSFET, Multiple-Gate (MuG), Oxide Charge Build-Up, Silicon-on-Insulator (SOI), Single Event Effects, SOI D Flip-Flop, Strain Channels, γ-Ray

References

[1] J. Alvarado, V. Kilchytska, O. Militaru, G. Berger and D. Flandre, in: Proceedings of EuroSOI 2009, 20-21 January 2009, Goteborg, Sweden, pp.101-102.

[2] V. Kilchytska, J. Alvarado, N. Collaert, R. Rooyackers, O. Militaru, G. Berger and D. Flandre: Solid-State Electronics Vol. 54 (2010), pp.196-202.

DOI: 10.1016/j.sse.2009.12.019

[3] V. Kilchytska, J. Alvarado, N. Collaert, R. Rooyackers, O. Militaru, G. Berger and D. Flandre: IEEE Transactions on Nuclear Science Vol. 57 (2010), pp.1764-70.

DOI: 10.1109/tns.2009.2037419

[4] J. Alvarado, V. Kilchytska, E. Boufouss and D. Flandre. in: Proceedings of EUROSOI 2010, Grenoble, France, January 2010, pp.81-82.

[5] J. Alvarado, E. Boufouss, V. Kilchytska and D. Flandre: Microelectronics reliability Vol. 50 (2010), pp.1852-1856.

DOI: 10.1016/j.microrel.2010.07.040

[6] V. Kilchytska, J. Alvarado, S. Put, N. Collaert, E. Simoen, C. Claeys, O. Miliratu, G. Berger and D. Flandre, in: Proceedings of ESREF 2010, Gaeta, Italy, 12-15 Oct. (2010).

[7] M. Gaillardin, P. Paillet, V. Ferlet-Cavrois, O. Faynot, C. Jahan and S. Cristoloveanu: IEEE Transactions on Nuclear Science Vol. 53 (2006), pp.3237-3241.

DOI: 10.1109/tns.2006.884351

[8] S. Put, E. Simoen, N. Collaert, C. Claeys, M. Van Uffelen and P. Leroux: IEEE Transactions on Nuclear Science Vol. 54 (2007), pp.2227-2232.

DOI: 10.1109/tns.2007.911420

[9] T. Nakamura, M. Baba, E. Ibe, Ya. Yahagi and H. Kameyama. Terrestrial Neutron-induced soft errors in advanced memory devices, World Scientific, Singapore (2008).

DOI: 10.1142/6661

[10] ITRS 2009 http: /www. itrs. net/Links/2009ITRS.

[11] X. Wu, P.C.H. Chan, A. Orozco, A. Vazquez, A. Chaudhry and J. -P. Colinge: Solid State Electronics Vol. 50 (2006), pp.287-290.

DOI: 10.1016/j.sse.2005.12.017

[12] J. -P. Colinge, A. Orozco, J. Rudee, W. Xiong, C.R. Cleavelin, T. Schulz, K. Schrufern G. Knoblinger and P. Partuno: IEEE Transactions on Nuclear Science Vol. 53, 2006, pp.3237-3241.

DOI: 10.1109/tns.2006.885841

[13] A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put and C. Claeys: IEEE Transaction on Nuclear Science Vol. 55 (2008), pp.3182-3188.

DOI: 10.1109/tns.2008.2007234

[14] J. -P. Colinge, A. Terao: IEEE Transactions on Nuclear Science Vol. 40 (1993), pp.78-81.

[15] D. Kobayashi, E. Simoen, S. Put, A. Griffoni, M. Poizat, K. Hirose, C. Claeys. in: Proceedings of RADECS 2010, 20-24 Sept. 2010, Aqua Dome Langenfeld, Austria. to be published in IEEE Transactions on Nuclear Sciences.

[16] G.C. Messenger, M.S. Ash, The effects of radiation on electronic systems. 2nd ed. Van Nostrand Reinhold (1992).

[17] W. Chang: Journal of Electronic Materials Vol. 21 (1992), pp.693-699.

[18] S. Duzellier, G. Berger in Radiation Effects on Embedded Systems , edited by R. Velazco et al, pp.201-232, Springer (2007).

[19] T. Rudenko, A. Rudenko, V. Kilchytska, S. Cristoloveanu, T. Ernst, J. -P. Colinge, D. Flandre and V. Dessard: Solid State Electronics Vol. 48 (2004), pp.389-399.

DOI: 10.1016/j.sse.2003.09.004

[20] N. Collaert et al. in: Proceedings of Symposium on VLSI Technology (2005), pp.108-109.

[21] V. Kilchytska, G. Pailloncy, D. Lederer, J. -P. Raskin, N. Collaert, M. Jurczak and D. Flandre: IEEE Electron Device Letters Vol. 28 ( 2007), p.419 – 421.

DOI: 10.1109/led.2007.895374

[22] J. Ramos, E. Augendre, A. Kottantharayil, et al., in Proceedings of ICSSICT 2006, pp.72-74.

[23] I. Ferain, L. Pantisano, A. Kottantharayil, J. Petry, L. Trojman, N. Collaert, M. Jurczak and K. De Meyer: Microelectronic Engineering Vol. 84 (2007), pp.1882-1885.

DOI: 10.1016/j.mee.2007.04.074

[24] V. Kilchytska, J. Alvarado, N. Collaert, R. Rooyakers, S. Put, C. Claeys and D. Flandre: Proc. of EuroSOI 2010, Grenoble, January 2010, pp.119-120., to be published in Solid State Electronics.

DOI: 10.1016/j.sse.2009.12.019