[1]
T.A. DeMassa and D.G. Goddard: Solid-State Electronics Vol. 14, no. 11 (1971), p.1107.
Google Scholar
[2]
T.A. DeMassa and G.T. Catalano: Solid-State Electronics Vol. 16, no. 8 (1973), p.847.
Google Scholar
[3]
T.A. DeMassa and S.R. Iyer: Solid-State Electronics Vol. 18, no. 11 (1975), p.931.
Google Scholar
[4]
T.A. DeMassa and S.R. Iyer: Solid-State Electronics Vol. 18, no. 11 (1975), p.933.
Google Scholar
[5]
R.E. Williams and D.W. Shaw: IEEE Trans. Electron Devices Vol. 25, no. 6 (1975), p.600.
Google Scholar
[6]
S.D.S. Malhi and C.A.T. Salama: Electronics Letters Vol. 16, no. 7 (1980), p.261.
Google Scholar
[7]
M.A. Pavanello, J.A. Martino, V. Dessard, and D. Flandre: Electrochemical and Solid-State Letters, no. 3 (2000), p.50–52.
Google Scholar
[8]
M.A. Pavanello, J.A. Martino, and D. Flandre: Solid-State Electronics Vol. 44, no. 6 (2000), p.917.
Google Scholar
[9]
M.A. Pavanello, J.A. Martino, and D. Flandre: Solid-State Electronics Vol. 44, no. 7 (2000), p.1219.
Google Scholar
[10]
M. Dehan and J. -P. Raskin: Solid-State Electronics Vol. 46, no. 7 (2002), p.1005.
Google Scholar
[11]
A. Kranti, T.M. Chung, D. Flandre, and J.P. Raskin: Solid-State Electronics Vol. 48, no. 6 (2004), p.947.
Google Scholar
[12]
A. Cerdeira, M.A. Aleman, M.A. Pavanello, J.A. Martino, L. Vancaillie, and D. Flandre: IEEE Trans. Electron Devices Vol. 52, no. 5 (2005), p.967.
DOI: 10.1109/ted.2005.846327
Google Scholar
[13]
K. Narasimhulu, M.P. Desai, S.G. Narendra, and V.R. Rao: IEEE Trans. Electron Devices Vol. 51, no. 9 (2004), p.1416.
Google Scholar
[14]
E. Simoen, C. Claeys, T.M. Chung, D. Flandre, M.A. Pavanello, J.A. Martino, and J. -P. Raskin: Solid-State Electronics Vol. 51, no. 2 (2007), p.260.
DOI: 10.1016/j.sse.2007.01.003
Google Scholar
[15]
T.C. Lim, R. Valentin, G. Dambrine, and F. Danneville: IEEE Electron Device Lett., Vol. 29, no. 1 (2008), p.118.
DOI: 10.1109/led.2007.911293
Google Scholar
[16]
Mostafa Emam, Paulius Sakalas, Danielle Vanhoenacker-Janvier, Jean-Pierre Raskin, and François Danneville: Proc. European Microwave Integrated Circuits Conf., Paris, France, 26 Sept. – 1 Oct. (2010), p.170.
Google Scholar
[17]
Mostafa Emam, Paulius Sakalas, Danielle Vanhoenacker-Janvier, Jean-Pierre Raskin, Tao Chuan Lim and François Danneville: IEEE Transactions on Electron Devices Vol. 56, no. 7 (2009), p.1516.
DOI: 10.1109/ted.2009.2021361
Google Scholar
[18]
M. Emam, A. Kumar, J. Ida, F. Danneville, D. Vanhoenacker-Janvier, and J. -P. Raskin: Proc. International IEEE SOI Conference, San Francisco, CA, Oct. 5–8 (2009), p.1.
DOI: 10.1109/soi.2009.5318757
Google Scholar
[19]
G. Palumbo and S. Pennisi: Int. J. Circ. Theor. Appl. Vol. 26, no. 3 (1998), p.293 {299, Dec. 1998, letter to the editor}.
Google Scholar
[20]
B. Parvais: Nonlinear devices characterization and micromachining techniques for RF integrated circuits (Ph.D. dissertation, Université catholique de Louvain, 2004).
Google Scholar
[21]
A. Cerdeira, M. Estrada, R. Quintero, D. Flandre, A. Ortiz-Conde, and F. J. García Sánchez: Solid-State Electronics Vol. 46, no. 1 (2002), p.103.
DOI: 10.1016/s0038-1101(01)00258-1
Google Scholar
[22]
A. Cerdeira, M. Alemán, M. Estrada, and D. Flandre: Solid-State Electronics, Vol. 48, no. 12 (2004), p.2225.
DOI: 10.1016/j.sse.2004.06.001
Google Scholar
[23]
A. Cerdeira, M. A. Alemán, M. Estrada, D. Flandre, B. Parvais, and G. Picún: Proc. 18th International Symposium on Microelectronic Technology and Devices SBMICRO Vol. 2003-9, São Paulo, SP, Brazil, Sep. 8-11 (2003), p.131.
Google Scholar
[24]
A. Cerdeira and M. Estrada: Proc. 7th International Conference on Solid-State and Integrated Circuits Technology, Vol. 2, Beijing, China, Oct. 18-21 (2004), p.1143.
Google Scholar
[25]
M. A. Pavanello, A. Cerdeira, J. A. Martino, J. -P. Raskin, and D. Flandre: Proc. 6th International Caribbean Conf. on Devices, Circuits and Systems, Mexico, Apr. 26-28 (2006), p.187.
DOI: 10.1109/iccdcs.2006.250859
Google Scholar