Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
The paper discusses some issues of modeling the MOS tunnel structure with a gate stack containing a semiconductor quantum well (double barrier MOS system). The considerations are illustrated by simulations with the use of a theoretical model. Results of simulations are compared with experimental characteristics of fabricated DB MOS diodes.
Alexei N. Nazarov and Jean-Pierre Raskin
B. Majkusiak and A. Mazurak, "Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures", Advanced Materials Research, Vol. 276, pp. 77-85, 2011