Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures

Bodgan Majkusiak; Andrzej Mazurak

doi:10.4028/www.scientific.net/AMR.276.77

Paper Titles

Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
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Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
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Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
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High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
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Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
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Electrical Properties of High-K LaLuO₃ Gate Oxide for SOI MOSFETs
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Effects of High–Energy Neutrons on Advanced SOI MOSFETs
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Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
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On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 276Some Issues of Modeling the Double Barrier...

Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures

Abstract:

The paper discusses some issues of modeling the MOS tunnel structure with a gate stack containing a semiconductor quantum well (double barrier MOS system). The considerations are illustrated by simulations with the use of a theoretical model. Results of simulations are compared with experimental characteristics of fabricated DB MOS diodes.

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Periodical:

Advanced Materials Research (Volume 276)

Pages:

77-85

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.276.77

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Online since:

July 2011

Authors:

Bodgan Majkusiak, Andrzej Mazurak

Keywords:

Metal-Oxide-Semiconductor Structures, Modeling, Tunneling

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References

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