Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures

Abstract:

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The paper discusses some issues of modeling the MOS tunnel structure with a gate stack containing a semiconductor quantum well (double barrier MOS system). The considerations are illustrated by simulations with the use of a theoretical model. Results of simulations are compared with experimental characteristics of fabricated DB MOS diodes.

Info:

Periodical:

Edited by:

Alexei N. Nazarov and Jean-Pierre Raskin

Pages:

77-85

DOI:

10.4028/www.scientific.net/AMR.276.77

Citation:

B. Majkusiak and A. Mazurak, "Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures", Advanced Materials Research, Vol. 276, pp. 77-85, 2011

Online since:

July 2011

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$35.00

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