Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs

Abstract:

Mobility degradation during gate length scaling is a well established experimental fact, which is confirmed also by Monte –Carlo simulation. We have analyzed the physical reason for this degradation using experimental and modeling data obtained in classic drift-diffusional approximation with electric field dependences of electron mobility. We have shown that this dependence is a main reason for mobility degradation in nanoscale FETs, which means also that the same reason will limit the drain current in future post-silicon CMOS generation with new materials like narrow band III/V compounds or graphene with the highest carrier velocity near 108 cm/s.

• Periodical: Advanced Materials Research (Volume 276)
• Pages: 59-65
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.276.59
• Online since: July 2011
• Authors: V.P. Popov, M.A. Ilnitsky
• Keywords: Double Gate (DG), Electron Mobility Degradation, High Field Saturation, Nouniform Channel, Short Channel Field Effect Transistors (FETs), Silicon-on-Insulator (SOI)

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