Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs

Abstract:

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Mobility degradation during gate length scaling is a well established experimental fact, which is confirmed also by Monte –Carlo simulation. We have analyzed the physical reason for this degradation using experimental and modeling data obtained in classic drift-diffusional approximation with electric field dependences of electron mobility. We have shown that this dependence is a main reason for mobility degradation in nanoscale FETs, which means also that the same reason will limit the drain current in future post-silicon CMOS generation with new materials like narrow band III/V compounds or graphene with the highest carrier velocity near 108 cm/s.

Info:

Periodical:

Edited by:

Alexei N. Nazarov and Jean-Pierre Raskin

Pages:

59-65

DOI:

10.4028/www.scientific.net/AMR.276.59

Citation:

V.P. Popov and M.A. Ilnitsky, "Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs", Advanced Materials Research, Vol. 276, pp. 59-65, 2011

Online since:

July 2011

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$35.00

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