Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels

Abstract:

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A semi-analytical model which is applicable to description of ballistic field-effect transistors with low-dimensional channels is proposed. For instance, such transistors can be manufactured on a “silicon-on-insulator” wafer. The model accounts for single-gate and double-gate structures with one-dimensional and two-dimensional channels. It differently describes the regimes of a transistor above threshold and below threshold. The first implies an essential influence of charge inside the channel on a potential distribution; the second supposes a negligible charge inside the channel. Both approaches are mainly based upon an approximate solution of the Poisson equation.

Info:

Periodical:

Edited by:

Alexei N. Nazarov and Jean-Pierre Raskin

Pages:

51-57

DOI:

10.4028/www.scientific.net/AMR.276.51

Citation:

A. Kohmyakov and V. Vyurkov, "Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels", Advanced Materials Research, Vol. 276, pp. 51-57, 2011

Online since:

July 2011

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$35.00

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