Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels

A. Kohmyakov; V. Vyurkov

doi:10.4028/www.scientific.net/AMR.276.51

Paper Titles

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO₂/Si Structures
p.21

Diamond – Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing
p.27

Hydrogen Gettering within Processed Oxygen-Implanted Silicon
p.35

Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
p.43

Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
p.51

Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
p.59

High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
p.67

Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
p.77

Electrical Properties of High-K LaLuO₃ Gate Oxide for SOI MOSFETs
p.87

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Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels

Abstract:

A semi-analytical model which is applicable to description of ballistic field-effect transistors with low-dimensional channels is proposed. For instance, such transistors can be manufactured on a “silicon-on-insulator” wafer. The model accounts for single-gate and double-gate structures with one-dimensional and two-dimensional channels. It differently describes the regimes of a transistor above threshold and below threshold. The first implies an essential influence of charge inside the channel on a potential distribution; the second supposes a negligible charge inside the channel. Both approaches are mainly based upon an approximate solution of the Poisson equation.

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Periodical:

Advanced Materials Research (Volume 276)

Pages:

51-57

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.276.51

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Online since:

July 2011

Authors:

A. Kohmyakov, V. Vyurkov

Keywords:

Ballistic Field-Effect Transistor, Double-Gate Structure, Semi-Analytical Model, SOI

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References

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