Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

S.O. Gordienko; A. Nazarov; A.V. Rusavsky; A.V. Vasin; N. Rymarenko; V.G. Stepanov; T.M. Nazarova; V.S. Lysenko

doi:10.4028/www.scientific.net/AMR.276.21

Paper Titles

Preface and Committee Members

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications
p.3

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO₂/Si Structures
p.21

Diamond – Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing
p.27

Hydrogen Gettering within Processed Oxygen-Implanted Silicon
p.35

Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
p.43

Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
p.51

Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
p.59

High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
p.67

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 276Influence of Hydrogen Plasma Treatment on a-SiC...

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO₂/Si Structures

Abstract:

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

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Periodical:

Advanced Materials Research (Volume 276)

Pages:

21-25

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.276.21

Citation:

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Online since:

July 2011

Authors:

S.O. Gordienko, A. Nazarov, A.V. Rusavsky, A.V. Vasin, N. Rymarenko, V.G. Stepanov, T.M. Nazarova, V.S. Lysenko

Keywords:

Amorphous Silicon Carbide Films, Ion-Plasma Deposition, Mott’s Law, RF Plasma Treatment, Variable Range Hopping Conductivity

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References

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DOI: 10.1007/1-4020-3471-7_34

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