Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures
This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.
Alexei N. Nazarov and Jean-Pierre Raskin
S.O. Gordienko et al., "Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures", Advanced Materials Research, Vol. 276, pp. 21-25, 2011