Hydrogen Gettering within Processed Oxygen-Implanted Silicon

Andrzej Misiuk; Adam Barcz; Jadwiga Bak-Misiuk; Alexander G. Ulyashin; Przemyslaw Romanowski

doi:10.4028/www.scientific.net/AMR.276.35

Paper Titles

Preface and Committee Members

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications
p.3

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO₂/Si Structures
p.21

Diamond – Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing
p.27

Hydrogen Gettering within Processed Oxygen-Implanted Silicon
p.35

Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
p.43

Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
p.51

Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
p.59

High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
p.67

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 276Hydrogen Gettering within Processed...

Hydrogen Gettering within Processed Oxygen-Implanted Silicon

Abstract:

Hydrogen gettering by implantation-disturbed buried layers in oxygen-implanted silicon (Si:O, prepared by O2+ implantation at energy 200 keV and doses 1014 cm-2 and 1017 cm-2) was investigated after annealing of Si:O at up to 1570 K, also under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing conditions, buried layers containing SiO2-x clusters and/or precipitates were formed. To produce Si:O,H, Si:O samples were subsequently treated in RF hydrogen plasma. As determined by Secondary Ion Mass Spectrometry, hydrogen was accumulated at the sample surface and within implantation-disturbed areas. It was still present in Si:O,H (D=1017 cm–2) even after subsequent annealing at up to 873 K. Hydrogen accumulation within disturbed areas of Si:O as well as of SOI can be used for recognition of defects in such structures.

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Periodical:

Advanced Materials Research (Volume 276)

Pages:

35-40

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.276.35

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Online since:

July 2011

Authors:

Andrzej Misiuk, Adam Barcz, Jadwiga Bak-Misiuk, Alexander G. Ulyashin, Przemyslaw Romanowski

Keywords:

CZ-Si, Gettering, High Temperature-Pressure, Hydrogen, Implantation, Oxygen, Si:O

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References

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