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Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model

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Abstract:

Theoretical model of thin film SOI MISFET based on the gate control of impact ionization avalanche in the drain induced p-n+ junction is developed. Such operation principle opens a way of the creation of transistors with high transconductance and operation frequency, and switching between the ON and OFF states by low gate voltage variation.

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Periodical:

Advanced Materials Research (Volume 276)

Pages:

43-49

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.276.43

Citation:

Cite this paper

Online since:

July 2011

Authors:

V. Dobrovolsky, Fedir Sizov, S. Cristoloveanu

Keywords:

Avalanche Impact Ionization, FET, High Transconductance, SOI, Switching

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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