Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model

Abstract:

Article Preview

Theoretical model of thin film SOI MISFET based on the gate control of impact ionization avalanche in the drain induced p-n+ junction is developed. Such operation principle opens a way of the creation of transistors with high transconductance and operation frequency, and switching between the ON and OFF states by low gate voltage variation.

Info:

Periodical:

Edited by:

Alexei N. Nazarov and Jean-Pierre Raskin

Pages:

43-49

DOI:

10.4028/www.scientific.net/AMR.276.43

Citation:

V. Dobrovolsky et al., "Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model", Advanced Materials Research, Vol. 276, pp. 43-49, 2011

Online since:

July 2011

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$35.00

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