Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
Theoretical model of thin film SOI MISFET based on the gate control of impact ionization avalanche in the drain induced p-n+ junction is developed. Such operation principle opens a way of the creation of transistors with high transconductance and operation frequency, and switching between the ON and OFF states by low gate voltage variation.
Alexei N. Nazarov and Jean-Pierre Raskin
V. Dobrovolsky et al., "Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model", Advanced Materials Research, Vol. 276, pp. 43-49, 2011