Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
The effects of high energy electron irradiation and high magnetic fields (up to 14 T) on the electrical characteristics of recrystallized p-type polysilicon-on-insulator layers were studied. The aim of the paper is to obtain the material suitable to create the sensors operating in harsh conditions.
Alexei N. Nazarov and Jean-Pierre Raskin
A. Druzhinin et al., "Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields", Advanced Materials Research, Vol. 276, pp. 109-116, 2011