Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields

Abstract:

Article Preview

The effects of high energy electron irradiation and high magnetic fields (up to 14 T) on the electrical characteristics of recrystallized p-type polysilicon-on-insulator layers were studied. The aim of the paper is to obtain the material suitable to create the sensors operating in harsh conditions.

Info:

Periodical:

Edited by:

Alexei N. Nazarov and Jean-Pierre Raskin

Pages:

109-116

DOI:

10.4028/www.scientific.net/AMR.276.109

Citation:

A. Druzhinin et al., "Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields", Advanced Materials Research, Vol. 276, pp. 109-116, 2011

Online since:

July 2011

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Price:

$35.00

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