Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields

Abstract:

The effects of high energy electron irradiation and high magnetic fields (up to 14 T) on the electrical characteristics of recrystallized p-type polysilicon-on-insulator layers were studied. The aim of the paper is to obtain the material suitable to create the sensors operating in harsh conditions.

• Periodical: Advanced Materials Research (Volume 276)
• Pages: 109-116
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.276.109
• Online since: July 2011
• Authors: Anatoly Druzhinin, Inna Marymova, Igor Kogut, Yuriy Khoverko
• Keywords: Electron Irradiation, Magnetoresistivity MR, Polysilicon-on-Insulator, Sensor, SOI-Structures

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