Abstract: Based on features of any shape of wire with complex geometric patterns, a method for modelling 3D wire is proposed, and the machining simulation of the 3D wire and collision detection between the wire and the machine are introduced. By using double buffering technology, we obtain smooth animation during the off-line machining simulation. The computational cost of a collision detection algorithm is decided not only by the complexity of the basic interference test used, but also by the number of times every test is applied. To simplify the collision detection algorithm, an approximate method of representing wire model and machine model by using line segments and planes is applied.
Abstract: Misfit between Manufacturing Resource Planning (MRPII) system and the manufacturing environment of adopting organization are well known in contributing to the failure of the system implementation and jeopardizing the system performance. Hence, it is vital to have a better understanding of the system-context misfit problem. Nevertheless, limited studies have empirically examined the relationship between the misfit and the system outcome, especially at the dimensional level of the variables. The purpose of this paper is to introduce a Misfit-Inviability Model (MIM) to conceptualize of relationships between MRPII misfit, extent of organizational readiness, and MRPII system outcome, at the dimensional level of each variable and grounded on strong theoretical foundations. The MIM is an enhancement of existing Fit-Viability Model (FVM). In terms of implication, the new model manages to represent the system adoption as a dynamic process over time, by incorporating implementation contingencies. Additionally, the framework serves as a general model that can be adapted to assess the relationship between outcome of various information systems and the misfits. Future research may include more testing and validation of the dimensions and constructs used in the model.
Abstract: Manufacturing resource planning (MRPII) system which is the core information system that supports the operations of manufacturing organization, are often failed to meet estimated benefits, impeding operational performance and strategic advantages, due to the misfit between the structure modeled in the system and the actual structure of manufacturing environment it intended to represent. Furthermore, disputations upon whether organizational adaptation is always superseding other misfit resolving strategies have increasingly exposed. Hence, this paper presents an operational framework – taxonomy model of MRPII misfit to be applied in a case study which involves three small and medium manufacturing organizations in Malaysia, with the purpose of systematically classify MRPII misfits, and subsequently to identify appropriate misfit resolving strategy (system modification or organization adaptation) based on the specificity of the misfit. The implications of each type of MRPII misfit have been discussed from the perspectives of degree of misfit severity, risk of the MRPII system, organizational discretion on structural change, and most importantly the misfit resolving strategy. In addition, the planned methodology of the case study is presented, in details of selection of case companies and data analysis method. The findings of this proposed study is expected to serve as general guidelines or basics that can be referred by adopting organization to build their resolving strategy, according to the specificity of MRPII misfit situation which they encountered.
Abstract: The thermal diffusion behavior of ion-implanted Arsenic (As) in SiGe alloy has been investigated and modeled. This paper introduces a neural network based model consisting of physics-based and process-based parameters for evaluating the effective diffusivity of Arsenic through SiGe accurately. The parameters that served as the input to the neural network included Ge content, diffusion temperature and anneal time. The model was validated for the germanium content of up to 45% with the reported data and the existing simulation models in Silvaco. The model incorporates all the effects associated with the change in the process parameters which affect the diffusivity of As in relaxed-SiGe. The model was found to be extremely accurate in predicting the exact dependencies of As diffusivity on physics-based and process parameters. The proposed empirical process model may find suitable application in prediction of thermal diffusion behavior of As in SiGe process-flow with emphasis on reduced computational time.
Abstract: High operating temperatures infrared photodetectors are needed for improving the performance of existing military and civilian infrared systems. To obtain high device performance at higher temperatures, the thermally generated noise required to be reduced. Minority-carrier extraction and exclusion techniques are the approaches for decreasing the thermal noise of infrared systems. In the present work, an InSb extraction diode was studied and simulated for operation in the MWIR region. The simulation was performed using ATLAS device simulator from SILVACO®. The energy band diagram, doping profile, electric field profile, dark current and spectral response were calculated as a function of device thickness, applied reverse voltage and operating wavelength. The simulated photodetector exhibited a zero bias resistance-area product, R0A = 1.6×〖10〗^(-3) Ω〖.cm〗^2 at 240K.
Abstract: The thermal diffusion behavior of ion-implanted Arsenic (As) in SiGeC alloy has been investigated and modeled. This paper introduces an empirical model consisting of physics-based and process-based parameters for evaluating the effective diffusivity of Arsenic in SiGeC accurately. The different process parameters that were found to affect the diffusivity were – Germanium content (x), diffusion temperature (T) and Carbon content (y). Germanium content taken into account was 7% and 12.3% for compressive strain in the structure with a Carbon content of 0.2%. The model incorporates all the effects associated with the change in the process parameters which affect the diffusivity of As in compressively strained-Si1-x-yGexCy. The model was found to be extremely accurate in predicting the exact dependencies of As diffusivity on physics-based and process parameters. The proposed empirical process model may find suitable application in the prediction of thermal diffusion behavior of As in Si1-x-yGexCy process-flow as well as in improving the existing model in Silvaco’s TCAD suite.
Abstract: The article describes the activities of spray dry, for which was designed a mathematical model of the drying. This model allows to identify and define the process throughout drying. The output of this model is the equation of balance. Production process of ceramic granulate was selected as subject for simulations. Simulation model is created in Matlab program – Simulink according to the equation for energy balance and parameter values from real kiln. Simulation monitors the dependency of mensural granulate moisture on absolute moisture of drying gas on the output.
Abstract: In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Taguchi experimental design method. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (VTH) results were used as the evaluation variable. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69%), whereas halo implant tilt was the second ranking factor (20%). The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6% and 5% respectively. As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at tox= 1.1nm.
Abstract: In this paper the natural convection heat transfer performance of horizontal heat sink was studied by numerical simulation and experiment. The numerical simulation results show that there are some interesting features in the flow field of heat sink model. 1) Among the fins, the air vertically flows only through the fins in the symmetry center of heat sink while it horizontally flows through the fins in other area. 2) There is an air stagnation zone located at the fin root in the symmetry center of heat sink. These features both caused the decrease in heat transfer temperature difference and heat transfer area in fact. The natural convection heat transfer performance of heat sink is affected at last. In order to eliminate the air stagnation zone and change in the flow way of air, some holes were perforated at the fin root. These holes play its role. In this test, the heat transfer power of heat sink with seven holes has increased by 16.7% compared with the prototype.With the increase in the number of holes, the natural convection heat transfer power of heat sink also increases. But when the number of holes reaches to a value, the increase in the number of holes will not function properly.
Abstract: To transmit and receive data over any network successfully, a protocol is required to manage the flow. High-level Data Link Control (HDLC) protocol is defined in Layer 2 of OSI model and is one of the most commonly used Layer 2 protocol. HDLC supports both full-duplex and half-duplex data transfer. In addition, it offers error control and flow control. Currently on the market there are many dedicated HDLC chips, but these chips are neither of control complexity nor of limited number of channels. This paper presents a new method for implementing a multi-channel HDLC protocol controller using Altera FPGA and VHDL as the target technology. Implementing a multi-channel HDLC protocol controller in FPGA offers the flexibility, upgradability and customization benefits of programmable logic and also reduces the total cost of every project which involves HDLC protocol controllers.