Effect of Annealing on Surface of Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Measured by Atomic Force Microscopy (AFM)

Article Preview

Abstract:

Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on silicon (111) substrate by RF magnetron sputtering using a nickel target and metallic alloy target (In-Sn, 90%-10%). The post-deposition annealing has been done for Ni/ITO films in air and the effect of annealing temperature on the surface morphology of ITO films was studied. It has been found that the annealing temperatures increase the film surface roughness in Ni/ITO structure. At annealing temperature of 600°C, AFM analysis reveals the highest root mean square roughness, peak to valley and thickness value of 2.598 nm, 59.115 nm, and 11.358 nm, respectively. Watershed analysis on AFM images show that the numbers of grain boundaries in Ni/ITO are reduced when annealing temperature is increased to higher temperatures.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

51-55

Citation:

Online since:

November 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Laux, S., N. Kaiser, A. Zöller, R. Götzelmann, H. Lauth and H. Bernitzki, Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation, Thin Solid Films 335 (1998) 1-5.

DOI: 10.1016/s0040-6090(98)00861-x

Google Scholar

[2] Zhao, L., Z. Zhao, H. Peng and R. Cui, RF sputtering for heterojunction solar cells application, Appl. Surf. Sci. 252 (2005) 385-392.

DOI: 10.1016/j.apsusc.2005.01.033

Google Scholar

[3] Hino, T., Y. Ogawa and N. Kuramoto, Preparation of functionalized and non-functionalized fullerene thin films on ITO glasses and the application to a counter electrode in a dye-sensitized, Carbon 44 (2006) 880-887.

DOI: 10.1016/j.carbon.2005.10.027

Google Scholar

[4] Vaishnav, V.S., P.D. Patel and N.G. Patel, Preparation and characterization of indium tin oxide thin films for their application as gas sensors, Thin Solid Films 487 (2005) 277-282.

DOI: 10.1016/j.tsf.2005.01.079

Google Scholar

[5] Chung, C.-H., Y.-W. Ko, Y.-H. Kim, C.-Y. Sohn, H.Y. Chu, S.-H. K. Park and J. H. Lee, Radio frequency magnetron sputter-deposited indium tin oxide for use as a cathode in transparent organic light-emitting diode, Thin Solid Films 491 (2005) 294-297.

DOI: 10.1016/j.tsf.2005.06.003

Google Scholar

[6] Satoh, T., H. Fujikawa and Y. Taga, Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices, App. Phys. Lett. 87 (2005) 143503.

DOI: 10.1063/1.2077835

Google Scholar

[7] Kundu. S. and P.K. Biswas, Synthesis and photoluminescence property of nanostructured sol-gel indium tin oxide film on glass, Chem. Phys. Lett. 414 (2005) 107-110.

DOI: 10.1016/j.cplett.2005.08.062

Google Scholar

[8] Fallah, H.R., M. Ghasemi, A. Hassanzadeh and H. Steki, The effect of deposition rate on electrical, optical and structural properties of tin-doped indium oxide (ITO) films on glass at low substrate temperature, Physica B. 373 (2006) 274-279.

DOI: 10.1016/j.physb.2005.11.159

Google Scholar

[9] Sreenivas, K., T.S. Rao and A. Mansingh, Preparation and characterization of rf sputtered indium tin oxide, J. Appl. Phys. 57 (1985) 384-392.

DOI: 10.1063/1.335481

Google Scholar

[10] Park, J.-O., J.-H. Lee, J.-J. Kim, S.-H. Cho and Y. K. Cho, Crystallization of indium tin oxide thin films prepared by RF-magnetron sputtering without external heating, Thin Solid Films 474 (2005) 127-132.

DOI: 10.1016/j.tsf.2004.08.172

Google Scholar

[11] Meng, L.-J. and M.P. dos Santos, Structure effect on electrical properties of ITO films prepared by RF reactive magnetron sputtering, Thin Solid Films 289 (1996) 65-69.

DOI: 10.1016/s0040-6090(96)08892-x

Google Scholar

[12] Bender, M., W. Seelig, C. Daube, H. Frankenberger, B. Ocker and J. Stollenwerk, Dependence of oxygen flow on optical and electrical properties of DC-magnetron sputtered ITO films, Thin Solid Films 326 (1998) 72-77.

DOI: 10.1016/s0040-6090(98)00521-5

Google Scholar

[13] Jung, Y.S. and S.S. Lee, Development of indium tin oxide film texture during DC magnetron sputtering deposition, J. Crys. Gro 259 (2003) 343-351.

DOI: 10.1016/j.jcrysgro.2003.07.006

Google Scholar

[14] H. L. Hartnagel, A. L. Dawar, A. K. Jain, and C. Jagadish, Semiconducting Transparent Thin Films (Institute of Physics, Bristol, 1995), J. F. Wager, D. A. Keszler, and R. E. Presley, Transparent Electronics (Springer, New York, 2008).

Google Scholar

[15] J. P. Zheng and H. S. Kwok, Low resistivity indium tin oxide films by pulsed laser deposition, Appl Phys Lett, 63 (1993) 1.

DOI: 10.1063/1.109736

Google Scholar