Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance

Abstract:

Article Preview

Info:

Periodical:

Defect and Diffusion Forum (Volumes 153-155)

Main Theme:

Edited by:

D.J. Fisher

Pages:

137-158

Citation:

E. Rimini et al., "Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance", Defect and Diffusion Forum, Vols. 153-155, pp. 137-158, 1998

Online since:

November 1997

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.