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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 153-155Interaction and Migration Properties of Ion Beam...

Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance

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Periodical:

Defect and Diffusion Forum (Volumes 153-155)

Pages:

137-158

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.153-155.137

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Online since:

November 1997

Authors:

Emanuele Rimini, Salvatore Coffa, Sebania Libertino, G. Mannino, F. Priolo, Vittorio Privitera

Keywords:

Deep Levels Transient Spectroscopy DLTS, Plasma Etching, Point Defect, Room Temperature Properties, Spreading Resistance Profiling SRP, Transient Enhanced Diffusion TED, Trap-Limited Migration

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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