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Self-Diffusion in Silicon
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Diffusion of Si Adsorbates on an Si(001) Surface
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Vacancies and Vacancy Defects in Si Observed by Positron Annihilation
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Vacancy Distributions in Silicon and Methods for Their Accurate Determination
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Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance
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Review of Growth Striations in CZ and MCZ Silicon Wafers
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Theory of Reaction-Diffusion Processes at Very High Dopant Concentrations
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Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy
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Analytical Expressions for the Length of Stacking Faults during Thermal Nitridation of Oxidized Silicon and Silicon
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Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance

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Periodical:

Defect and Diffusion Forum (Volumes 153-155)

Pages:

137-158

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.153-155.137

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Online since:

November 1997

Authors:

Emanuele Rimini, Salvatore Coffa, Sebania Libertino, G. Mannino, F. Priolo, Vittorio Privitera

Keywords:

Deep Levels Transient Spectroscopy DLTS, Plasma Etching, Point Defect, Room Temperature Properties, Spreading Resistance Profiling SRP, Transient Enhanced Diffusion TED, Trap-Limited Migration

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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