Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance

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Periodical:

Defect and Diffusion Forum (Volumes 153-155)

Main Theme:

Edited by:

D.J. Fisher

Pages:

137-158

DOI:

10.4028/www.scientific.net/DDF.153-155.137

Citation:

E. Rimini et al., "Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance", Defect and Diffusion Forum, Vols. 153-155, pp. 137-158, 1998

Online since:

November 1997

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$35.00

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