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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 153-155Diffusion and Reaction Kinetics of...

Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy

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Diffusion in Silicon - 10 Years of Research

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Periodical:

Defect and Diffusion Forum (Volumes 153-155)

Pages:

193-204

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.153-155.193

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Online since:

November 1997

Authors:

Anders Hallén, N. Keskitalo, Bengt Gunnar Svensson

Keywords:

Divacancy, Dose Rate, Ion Implantation, Point Defect, Silicon, Vacancy Oxygen Centre

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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