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Review of Growth Striations in CZ and MCZ Silicon Wafers
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Theory of Reaction-Diffusion Processes at Very High Dopant Concentrations
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 153-155Theory of Reaction-Diffusion Processes at Very...

Theory of Reaction-Diffusion Processes at Very High Dopant Concentrations

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Diffusion in Silicon - 10 Years of Research

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Periodical:

Defect and Diffusion Forum (Volumes 153-155)

Pages:

183-192

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.153-155.183

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Online since:

November 1997

Authors:

E. Antoncik

Keywords:

Diffusion Coefficient, Diffusion Profiles, Reaction-Diffusion Equations

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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