Investigating Interdiffusion in Mo/V Multilayers from X-Ray Scattering and Kinetic Simulations

M.C. Benoudia; Jean Marc Roussel; Stephane Labat; O. Thomas; Dezső L. Beke; G.A. Langer; Miklos Kis-Varga

doi:10.4028/www.scientific.net/DDF.264.13

Paper Titles

Committees

Preface

Stress and Intermixing in Epitaxial Ni(111)/Mo(110) Superlattices
p.1

Redistribution of Implanted Species in Polycrystalline Silicon Films on Silicon Substrate
p.7

Investigating Interdiffusion in Mo/V Multilayers from X-Ray Scattering and Kinetic Simulations
p.13

Intermixing in Cu/Co: Molecular Dynamics Simulations and Auger Electron Spectroscopy Depth Profiling
p.19

Simultaneous Measurement of Tracer Jump Frequencies on Different Sublattices in Ga₇Pd₃ Using PAC
p.27

Dopant Diffusion during Amorphous Silicon Crystallization
p.33

Grain Boundary Surface Tension, Segregation and Diffusion in Cu-Sn System
p.39

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Investigating Interdiffusion in Mo/V Multilayers from X-Ray Scattering and Kinetic Simulations

Abstract:

In order to investigate interdiffusion in Mo/V multilayers, we present a method that combines both kinetic mean-field simulations and calculations of x-ray scattered intensity with disorder effects. Considering preliminary experimental data obtained on Mo(4nm)/V(2nm) multilayers, we show that the angular shift of spectra observed after annealing, should take place for both Fickian and asymmetric interdiffusion modes. In contrast, clear signatures of the interdiffusion modes are found from the simulation of the peak intensities. These results offer interesting perspectives for a full analysis of the interdiffusion in these systems.