Dopant Diffusion during Amorphous Silicon Crystallization

Abstract:

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We have investigated the redistribution of B during the crystallization of an amorphous Si layer homogeneously doped with P. The redistribution of B only occurs for concentrations lower than 2 × 1020 at cm−3. Crystallization leads to a non “Fickian” redistribution, allowing an abrupt interface between the regions doped and undoped with B. Once the crystallization is ended, B diffuses through the layer in the type B regime with a coefficient which is in agreement with the literature data for diffusion in polycrystalline Si. Although the P distribution is homogeneous in the entire layer, for a temperature as high as 755 °C, P diffuses towards the region the most concentrated in B. The B and P interactions are interpreted as chemical interactions.

Info:

Periodical:

Edited by:

D. L. Beke, Z. Erdélyi and I. A. Szabó

Pages:

33-38

DOI:

10.4028/www.scientific.net/DDF.264.33

Citation:

A. Portavoce et al., "Dopant Diffusion during Amorphous Silicon Crystallization", Defect and Diffusion Forum, Vol. 264, pp. 33-38, 2007

Online since:

April 2007

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$35.00

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