Dopant Diffusion during Amorphous Silicon Crystallization

Alain Portavoce; Roberto  Simola; Dominique Mangelinck; Jean Bernardini; Pascal Fornara

doi:10.4028/www.scientific.net/DDF.264.33

Paper Titles

Redistribution of Implanted Species in Polycrystalline Silicon Films on Silicon Substrate
p.7

Investigating Interdiffusion in Mo/V Multilayers from X-Ray Scattering and Kinetic Simulations
p.13

Intermixing in Cu/Co: Molecular Dynamics Simulations and Auger Electron Spectroscopy Depth Profiling
p.19

Simultaneous Measurement of Tracer Jump Frequencies on Different Sublattices in Ga₇Pd₃ Using PAC
p.27

Dopant Diffusion during Amorphous Silicon Crystallization
p.33

Grain Boundary Surface Tension, Segregation and Diffusion in Cu-Sn System
p.39

The Stress Field in Cu-Fe-Ni Diffusion Couples
p.47

Effect of Morphology on the Mobility of Nanosized Liquid Pb Inclusions in Solid Al
p.55

Nonlinear Field Theory of the Stress Induced Interdiffusion and Mass Transport
p.63

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Dopant Diffusion during Amorphous Silicon Crystallization

Abstract:

We have investigated the redistribution of B during the crystallization of an amorphous Si layer homogeneously doped with P. The redistribution of B only occurs for concentrations lower than 2 × 1020 at cm−3. Crystallization leads to a non “Fickian” redistribution, allowing an abrupt interface between the regions doped and undoped with B. Once the crystallization is ended, B diffuses through the layer in the type B regime with a coefficient which is in agreement with the literature data for diffusion in polycrystalline Si. Although the P distribution is homogeneous in the entire layer, for a temperature as high as 755 °C, P diffuses towards the region the most concentrated in B. The B and P interactions are interpreted as chemical interactions.

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Defect and Diffusion Forum (Volume 264)

Pages:

33-38

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.264.33

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Online since:

April 2007

Authors:

Alain Portavoce, Roberto Simola, Dominique Mangelinck, Jean Bernardini, Pascal Fornara

Keywords:

Boron, Diffusion, Dopant Interactions, Phosphorus, Polycrystalline Silicon, Silicon Crystallization

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